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Efficient high-gain low-noise amplifier topologies using GaAs FET at 3.5 GHz for 5G systems

International Journal of Electrical and Computer Engineering (IJECE) · Vol. 15 No. 4 (2025)

DOI
10.11591/ijece.v15i4.pp3833-3842
ISSN
2722-2578, 2088-8708
Published
2025-08-01
Publisher
Institute of Advanced Engineering and Science
License
creativecommons.org/licenses/by-sa/4.0

Abstract

Achieving a gain greater than 18 dB with a noise figure (NF) below 2 dB at 3.5 GHz remains a formidable challenge for low-noise amplifiers (LNAs) in sub-6 GHz 5G systems. This study explores and evaluates various LNA topologies, including single-stage designs with inductive source degeneration and cascade configurations, to optimize performance. The single-stage topology with inductive source degeneration achieves a gain of 18.141 dB and an NF of 1.448 dB, while the cascade-stage common-source low-noise amplifier with inductive degeneration achieves a gain of 32.714 dB and a noise figure of 1.563 dB. These results underscore the importance of GaAs FET technology in meeting the demanding requirements of 5G systems, specifically in the 3.5 GHz frequency band. The advancements demonstrated in gain, noise figure, and linearity affirm the viability of optimized LNA topologies for high-performance 5G applications, supporting improved signal quality and reliability essential for modern telecommunication infrastructure.

Collaboration network of the authors

21 authors · 61 co-authorship links · 11 across different organisations

Hover or tap a name to highlight its co-authors. Double-click to open the author's page.

  • Université Ibn-Tofail
  • Sidi Mohamed Ben Abdellah University
  • Affiliation unknown
  • Different organisations
  • Same organisation
  • Affiliation unknown
  • Thicker line = more joint articles · bigger circle = more articles
Show as table
Co-authorOrganisationJoint articles
Abdessamad BenlafkihUniversité Ibn-Tofail3
Mustapha ZahriUniversité Ibn-Tofail1
Youssef MenchafouSidi Mohamed Ben Abdellah University1
Hassane El MarkhiSidi Mohamed Ben Abdellah University1
Echarradi OthmaneUniversité Ibn-Tofail1
Mounir FAHOUMEUniversité Ibn-Tofail1
Anas El MalikiUniversité Ibn-Tofail1
Kamal AnouneAffiliation unknown1
Yassine El MoujahidUniversité Ibn-Tofail1
Nadia El HarfaouiUniversité Ibn-Tofail1
Ahmed Amine BarakateUniversité Ibn-Tofail1
Sami ChoubaneUniversité Ibn-Tofail1

Affiliations come from OpenAlex; journal OAI-PMH metadata carries none. Authors without an OpenAlex ID are matched by name, which can merge or split people.

This record comes from Crossref (what the publisher deposited), because the journal's own OAI-PMH endpoint could not be harvested.

Metadata source: Crossref API (cadangan, berdasarkan ISSN) https://api.crossref.org/journals/2088-8708/works, first harvested 27 Okt 2026, last seen 27 Okt 2026.
Metadata as oai_dc, converted from Crossref
<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/"><dc:title>Efficient high-gain low-noise amplifier topologies using GaAs FET at 3.5 GHz for 5G systems</dc:title><dc:creator>Zarrik, Samia</dc:creator><dc:creator>Bendali, Abdelhak</dc:creator><dc:creator>Fadlaoui, Elmahdi</dc:creator><dc:creator>Benkhadda, Karima</dc:creator><dc:creator>Habibi, Sanae</dc:creator><dc:creator>Kobbi, Mouad El</dc:creator><dc:creator>Sahel, Zahra</dc:creator><dc:creator>Habibi, Mohamed</dc:creator><dc:creator>Hadjoudja, Abdelkader</dc:creator><dc:description>&lt;jats:p&gt;Achieving a gain greater than 18 dB with a noise figure (NF) below 2 dB at 3.5 GHz remains a formidable challenge for low-noise amplifiers (LNAs) in sub-6 GHz 5G systems. This study explores and evaluates various LNA topologies, including single-stage designs with inductive source degeneration and cascade configurations, to optimize performance. The single-stage topology with inductive source degeneration achieves a gain of 18.141 dB and an NF of 1.448 dB, while the cascade-stage common-source low-noise amplifier with inductive degeneration achieves a gain of 32.714 dB and a noise figure of 1.563 dB. These results underscore the importance of GaAs FET technology in meeting the demanding requirements of 5G systems, specifically in the 3.5 GHz frequency band. The advancements demonstrated in gain, noise figure, and linearity affirm the viability of optimized LNA topologies for high-performance 5G applications, supporting improved signal quality and reliability essential for modern telecommunication infrastructure.&lt;/jats:p&gt;</dc:description><dc:publisher>Institute of Advanced Engineering and Science</dc:publisher><dc:date>2025-08-01</dc:date><dc:type>info:eu-repo/semantics/article</dc:type><dc:format>application/pdf</dc:format><dc:identifier>https://doi.org/10.11591/ijece.v15i4.pp3833-3842</dc:identifier><dc:identifier>10.11591/ijece.v15i4.pp3833-3842</dc:identifier><dc:source>International Journal of Electrical and Computer Engineering (IJECE); Vol 15 No 4 (2025); 3833</dc:source><dc:source>2722-2578</dc:source><dc:source>2088-8708</dc:source><dc:relation>https://ijece.iaescore.com/index.php/IJECE/article/viewFile/38361/18343</dc:relation><dc:rights>http://creativecommons.org/licenses/by-sa/4.0</dc:rights></oai_dc:dc>