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Design and performance analysis of an NSFET-based biosensor for the early detection of dengue

International Journal of Electrical and Computer Engineering (IJECE) · Vol. 15 No. 6 (2025)

DOI
10.11591/ijece.v15i6.pp5183-5192
ISSN
2722-2578, 2088-8708
Published
2025-12-01
Publisher
Institute of Advanced Engineering and Science
License
creativecommons.org/licenses/by-sa/4.0

Abstract

Healthcare industry is changing due to technological breakthroughs that spur creative methods for diagnosing and treating illnesses. This study examines the development of nanowire-based stacked field-effect transistor (NSFET) biosensors for the early detection of dengue virus. Dengue fever is severe threat to public health and a flavivirus spread by mosquitoes. About half of the global population is at risk due to an endemic illness in tropical and subtropical regions, which affects approximately 100 million individuals annually in 130 countries. The virus has four antigenically distinct serotypes, and there may be a fifth. These serotypes induce variety of clinical symptoms. This can include benign infections that go away on their own or extremely serious, potentially fatal consequences like organ failure, plasma leakage, and bleeding. While many techniques are now used to diagnose dengue fever in the laboratory, no single technique satisfies the optimum standards for speed, economy, sensitivity, specificity. To close this gap in dengue diagnosis, newer detection technologies are desperately needed. This ultrasensitive label-free electrical device can detect the dengue virus (DENV) early on and prevent severe additional harm to humans. To detect various DENV concentrations in human blood and demonstrate potential for eventual point-of-care (POC) detection, NSFET constructed and simulated in this work.

Collaboration network of the authors

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Metadata source: Crossref API (cadangan, berdasarkan ISSN) https://api.crossref.org/journals/2088-8708/works, first harvested 27 Okt 2026, last seen 1 Nov 2026.
Metadata as oai_dc, converted from Crossref
<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/"><dc:title>Design and performance analysis of an NSFET-based biosensor for the early detection of dengue</dc:title><dc:creator>Patnala, Tulasi Radhika</dc:creator><dc:creator>Tatineni, Madhavi</dc:creator><dc:description>&lt;jats:p&gt;Healthcare industry is changing due to technological breakthroughs that spur creative methods for diagnosing and treating illnesses. This study examines the development of nanowire-based stacked field-effect transistor (NSFET) biosensors for the early detection of dengue virus. Dengue fever is severe threat to public health and a flavivirus spread by mosquitoes. About half of the global population is at risk due to an endemic illness in tropical and subtropical regions, which affects approximately 100 million individuals annually in 130 countries. The virus has four antigenically distinct serotypes, and there may be a fifth. These serotypes induce variety of clinical symptoms. This can include benign infections that go away on their own or extremely serious, potentially fatal consequences like organ failure, plasma leakage, and bleeding. While many techniques are now used to diagnose dengue fever in the laboratory, no single technique satisfies the optimum standards for speed, economy, sensitivity, specificity. To close this gap in dengue diagnosis, newer detection technologies are desperately needed. This ultrasensitive label-free electrical device can detect the dengue virus (DENV) early on and prevent severe additional harm to humans. To detect various DENV concentrations in human blood and demonstrate potential for eventual point-of-care (POC) detection, NSFET constructed and simulated in this work.&lt;/jats:p&gt;</dc:description><dc:publisher>Institute of Advanced Engineering and Science</dc:publisher><dc:date>2025-12-01</dc:date><dc:type>info:eu-repo/semantics/article</dc:type><dc:format>application/pdf</dc:format><dc:identifier>https://doi.org/10.11591/ijece.v15i6.pp5183-5192</dc:identifier><dc:identifier>10.11591/ijece.v15i6.pp5183-5192</dc:identifier><dc:source>International Journal of Electrical and Computer Engineering (IJECE); Vol 15 No 6 (2025); 5183</dc:source><dc:source>2722-2578</dc:source><dc:source>2088-8708</dc:source><dc:relation>https://ijece.iaescore.com/index.php/IJECE/article/viewFile/40484/18586</dc:relation><dc:rights>http://creativecommons.org/licenses/by-sa/4.0</dc:rights></oai_dc:dc>