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Design and Analysis of 1MHz Class-E Power Amplifier for Load and Duty Cycle Variations

International Journal of Power Electronics and Drive Systems · Vol. 7 No. 2 (2016) · hlm. 358–368

DOI
10.11591/ijpeds.v7.i2.pp358-368
ISSN
2722-256X, 2088-8694
Terbit
2016-06-01
Penerbit
Institute of Advanced Engineering and Science
Bahasa
eng
Lisensi
creativecommons.org/licenses/by-sa/4.0

Abstrak

This paper presents the simulation and experimental of Class-E power amplifier which consists of a load network and a single transistor. The transistor is operated as a switch at the carrier frequency of the output signal. In general, Class-E power amplifier is often used in designing a high frequency ac power source because of its ability to satisfy the zero voltage switching (ZVS) conditions efficiently even when working at high frequencies with significant reduction in switching losses. In this paper, a 10W Class-E power amplifier is designed, constructed, and tested in the laboratory. SK40C microcontroller board with PIC16F877A is used to generate a pulse width modulation (PWM) switching signal to drive the IRF510 MOSFET. To be specific, in this paper, the effect on switching and performance at 1MHz frequency are studied in order to understand the Class-E inverter behavior. Performance parameters relationships were observed and analysed in respect to the load and duty cycle. Theoretical calculations, simulation and experimental results for optimum operation using selected component values are then compared and presented.

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32 penulis · 113 tautan kepenulisan bersama · 9 lintas organisasi

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  • Universiti Teknikal Malaysia Melaka
  • Universiti Malaysia Terengganu
  • Universiti Teknologi MARA
  • Afiliasi tidak diketahui
  • Organisasi berbeda
  • Organisasi sama
  • Afiliasi tidak diketahui
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Tampilkan sebagai tabel
Rekan penulisOrganisasiArtikel bersama
Shakir SaatUniversiti Teknikal Malaysia Melaka11
Md Rabiul AwalUniversiti Malaysia Terengganu5
Huzaimah HusinUniversiti Teknikal Malaysia Melaka4
Khairul Kamarudin HasanUniversiti Teknologi MARA3
Zamre Abdul GhaniAfiliasi tidak diketahui3
Sing Kiong NguangAfiliasi tidak diketahui3
Ahmad Husni Mohd ShapriAfiliasi tidak diketahui2
N. X. YinUniversiti Teknikal Malaysia Melaka1
Yusmarnita binti YusopUniversiti Teknikal Malaysia Melaka1
R. A. RaniAfiliasi tidak diketahui1
F. K. Abdul RahmanAfiliasi tidak diketahui1
A. A. IsaAfiliasi tidak diketahui1
Cheok Yan QiUniversiti Teknikal Malaysia Melaka1
Amy Sarah NguAfiliasi tidak diketahui1
N. B. AsanAfiliasi tidak diketahui1
Peter Adam HoeherAfiliasi tidak diketahui1
Masmaria Abdul MajidAfiliasi tidak diketahui1
Mohd Sufian RamliAfiliasi tidak diketahui1
Ahmed Al-HattamiAfiliasi tidak diketahui1
A. H. M. ShapriAfiliasi tidak diketahui1
Muslimah MeorAfiliasi tidak diketahui1
F. K. A. RahmanAfiliasi tidak diketahui1
Y. AzizAfiliasi tidak diketahui1
Yusmarnita YusofUniversiti Teknikal Malaysia Melaka1
Norezmi JamalAfiliasi tidak diketahui1
Thoriq ZaidAfiliasi tidak diketahui1
SK NguangAfiliasi tidak diketahui1

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Sumber metadata: OAI-PMH (metadata jurnal) http://ijpeds.iaescore.com/index.php/IJPEDS/oai, pertama di-harvest 8 Nov 2026, terakhir terlihat 8 Nov 2026.
Metadata asli (oai_dc) 
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	<dc:title xml:lang="en-US">Design and Analysis of 1MHz Class-E Power Amplifier for Load and Duty Cycle Variations</dc:title>
	<dc:creator>Yusop, Yusmarnita</dc:creator>
	<dc:creator>Md Saat, Mohd Shakir</dc:creator>
	<dc:creator>Husin, Siti Huzaimah</dc:creator>
	<dc:creator>Kiong Nguang, Sing</dc:creator>
	<dc:creator>Hindustan, Imran</dc:creator>
	<dc:description xml:lang="en-US">This paper presents the simulation and experimental of Class-E power amplifier which consists of a load network and a single transistor. The transistor is operated as a switch at the carrier frequency of the output signal. In general, Class-E power amplifier is often used in designing a high frequency ac power source because of its ability to satisfy the zero voltage switching (ZVS) conditions efficiently even when working at high frequencies with significant reduction in switching losses. In this paper, a 10W Class-E power amplifier is designed, constructed, and tested in the laboratory. SK40C microcontroller board with PIC16F877A is used to generate a pulse width modulation (PWM) switching signal to drive the IRF510 MOSFET. To be specific, in this paper, the effect on switching and performance at 1MHz frequency are studied in order to understand the Class-E inverter behavior. Performance parameters relationships were observed and analysed in respect to the load and duty cycle. Theoretical calculations, simulation and experimental results for optimum operation using selected component values are then compared and presented.</dc:description>
	<dc:publisher xml:lang="en-US">Institute of Advanced Engineering and Science</dc:publisher>
	<dc:date>2016-06-01</dc:date>
	<dc:type>info:eu-repo/semantics/article</dc:type>
	<dc:type>info:eu-repo/semantics/publishedVersion</dc:type>
	<dc:type xml:lang="en-US"></dc:type>
	<dc:format>application/pdf</dc:format>
	<dc:identifier>https://ijpeds.iaescore.com/index.php/IJPEDS/article/view/594</dc:identifier>
	<dc:identifier>10.11591/ijpeds.v7.i2.pp358-368</dc:identifier>
	<dc:source xml:lang="en-US">International Journal of Power Electronics and Drive Systems (IJPEDS); Vol 7, No 2: June 2016; 358-368</dc:source>
	<dc:source>2722-256X</dc:source>
	<dc:source>2088-8694</dc:source>
	<dc:source>10.11591/ijpeds.v7.i2</dc:source>
	<dc:language>eng</dc:language>
	<dc:relation>https://ijpeds.iaescore.com/index.php/IJPEDS/article/view/594/380</dc:relation>
	<dc:rights xml:lang="en-US">Copyright (c) 2016 Yusmarnita Yusop, Mohd Shakir Md Saat, Siti Huzaimah Husin, Sing Kiong Nguang, Imran Hindustan</dc:rights>
	<dc:rights xml:lang="en-US">http://creativecommons.org/licenses/by-sa/4.0</dc:rights>
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