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Adaptive electromagnetic interference mitigation for wide-bandgap power converters: a review

International Journal of Power Electronics and Drive Systems · Vol. 17 No. 3 (2026) · hlm. 1941–1949

DOI
10.11591/ijpeds.v17.i3.pp1941-1949
ISSN
2722-256X, 2088-8694
Terbit
2026-09-01
Penerbit
Institute of Advanced Engineering and Science
Bahasa
eng
Lisensi
creativecommons.org/licenses/by-sa/4.0

Abstrak

Wide-bandgap (WBG) semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN) enable higher switching frequencies, greater efficiency, and increased power density, but their fast-switching transients and steep dv/dt and di/dt characteristics generate substantially elevated electromagnetic interference (EMI). This review synthesizes peer-reviewed studies to quantitatively compare EMI mitigation outcomes across source-side modulation, gate-driving, filtering, packaging, and AI-based techniques for WBG converters. Packaging-integrated common-mode screens cut CM current by up to 26 dB while raising partial-discharge inception voltage by 53%. Chaotic PWM with passive filtering reaches up to 50 dB attenuation with a 74% reduction in inductor volume. AI-based closed-loop adaptation attains up to 19.2 dB average attenuation with 98.5% CISPR 25 compliance, while RL-based filters reach 25-30 dB across wide frequency ranges. Active gate-driving reduces peak EMI by 19-39 dB. No single technique simultaneously delivers the highest suppression, efficiency, and lowest cost. Hybrid Si/WBG design currently offers the most balanced trade-off. These outcomes are consolidated into a taxonomy of propagation mechanisms, mitigation techniques, application-specific strategies across five domains, and open gaps in standardized testing and validation. These findings provide a practical, quantitative reference for engineers designing next-generation, EMC-compliant WBG power electronic systems.

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  • University of Technology Malaysia
  • Universiti Malaysia Perlis
  • Universitas Ahmad Dahlan
  • University of Brawijaya
  • Afiliasi tidak diketahui
  • Organisasi berbeda
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Rekan penulisOrganisasiArtikel bersama
Tole SutiknoUniversitas Ahmad Dahlan4
Mohammad Faridun Naim TajuddinUniversiti Malaysia Perlis4
Azralmukmin AzmiAfiliasi tidak diketahui4
M. Saad ArifAfiliasi tidak diketahui2
Norjulia Mohamad NordinAfiliasi tidak diketahui2
Jasrul Jamani JamianUniversity of Technology Malaysia2
Razman AyopAfiliasi tidak diketahui2
Chee Wei TanAfiliasi tidak diketahui2
Dalya Hamzah Al-MamooriAfiliasi tidak diketahui2
Nur Afida MuhammadAfiliasi tidak diketahui1
Mohd Nasrul Izzani JamaludinAfiliasi tidak diketahui1
Md. Ashraf Ali KhanAfiliasi tidak diketahui1
Kuber KuberAfiliasi tidak diketahui1
Yusra WahabAfiliasi tidak diketahui1
Rini Nur HasanahUniversity of Brawijaya1
Muhammad Gul E. IslamAfiliasi tidak diketahui1
Sevia Mahdaliza IdrusUniversity of Technology Malaysia1
Ahmad Takiyuddin AbdullahAfiliasi tidak diketahui1
Mohd Junaidi Abdul AzizUniversity of Technology Malaysia1
Nor Akmal RaiAfiliasi tidak diketahui1
Mohd Rodhi SahidAfiliasi tidak diketahui1
Zulkarnain Ahmad NoordenUniversity of Technology Malaysia1
Nik Din MuhamadAfiliasi tidak diketahui1
Zeeshan SarwerAfiliasi tidak diketahui1
Mohd ZaidAfiliasi tidak diketahui1
Shahbaz AhmadAfiliasi tidak diketahui1
Shahril Irwan SulaimanAfiliasi tidak diketahui1
Yazhar YatimAfiliasi tidak diketahui1
M. Saad Bin ArifAfiliasi tidak diketahui1
Naziha Ahmad AzliAfiliasi tidak diketahui1
Ali A. Abdullah AlbakryAfiliasi tidak diketahui1
Mohd Zaki DaudAfiliasi tidak diketahui1
Mohd Fayzul MohammedAfiliasi tidak diketahui1
Fawaz Ahmed Ali AlwesabiAfiliasi tidak diketahui1
Ali Saleh AzizAfiliasi tidak diketahui1
Mohamad Shukor Abdul RahimAfiliasi tidak diketahui1

Afiliasi berasal dari OpenAlex; metadata OAI-PMH jurnal tidak memuatnya. Penulis tanpa ID OpenAlex dicocokkan berdasarkan nama, sehingga dua orang bisa tergabung atau satu orang bisa terpisah.

Sumber metadata: OAI-PMH (metadata jurnal) http://ijpeds.iaescore.com/index.php/IJPEDS/oai, pertama di-harvest 8 Nov 2026, terakhir terlihat 8 Nov 2026.
Metadata asli (oai_dc) 
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	<dc:title xml:lang="en-US">Adaptive electromagnetic interference mitigation for wide-bandgap power converters: a review</dc:title>
	<dc:creator>Rahman, Md Shishir</dc:creator>
	<dc:creator>Saimon, Siti Mahfuza</dc:creator>
	<dc:creator>Ayob, Shahrin Md</dc:creator>
	<dc:creator>Noor, Muhammad Yusof Mohd</dc:creator>
	<dc:subject xml:lang="en-US">electromagnetic interference; EMI mitigation; power electronics;  power electronics converters; wide-bandgap semiconductors</dc:subject>
	<dc:description xml:lang="en-US">Wide-bandgap (WBG) semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN) enable higher switching frequencies, greater efficiency, and increased power density, but their fast-switching transients and steep dv/dt and di/dt characteristics generate substantially elevated electromagnetic interference (EMI). This review synthesizes peer-reviewed studies to quantitatively compare EMI mitigation outcomes across source-side modulation, gate-driving, filtering, packaging, and AI-based techniques for WBG converters. Packaging-integrated common-mode screens cut CM current by up to 26 dB while raising partial-discharge inception voltage by 53%. Chaotic PWM with passive filtering reaches up to 50 dB attenuation with a 74% reduction in inductor volume. AI-based closed-loop adaptation attains up to 19.2 dB average attenuation with 98.5% CISPR 25 compliance, while RL-based filters reach 25-30 dB across wide frequency ranges. Active gate-driving reduces peak EMI by 19-39 dB. No single technique simultaneously delivers the highest suppression, efficiency, and lowest cost. Hybrid Si/WBG design currently offers the most balanced trade-off. These outcomes are consolidated into a taxonomy of propagation mechanisms, mitigation techniques, application-specific strategies across five domains, and open gaps in standardized testing and validation. These findings provide a practical, quantitative reference for engineers designing next-generation, EMC-compliant WBG power electronic systems.</dc:description>
	<dc:publisher xml:lang="en-US">Institute of Advanced Engineering and Science</dc:publisher>
	<dc:contributor xml:lang="en-US"></dc:contributor>
	<dc:date>2026-09-01</dc:date>
	<dc:type>info:eu-repo/semantics/article</dc:type>
	<dc:type>info:eu-repo/semantics/publishedVersion</dc:type>
	<dc:type xml:lang="en-US"></dc:type>
	<dc:format>application/pdf</dc:format>
	<dc:identifier>https://ijpeds.iaescore.com/index.php/IJPEDS/article/view/25269</dc:identifier>
	<dc:identifier>10.11591/ijpeds.v17.i3.pp1941-1949</dc:identifier>
	<dc:source xml:lang="en-US">International Journal of Power Electronics and Drive Systems (IJPEDS); Vol 17, No 3: September 2026; 1941-1949</dc:source>
	<dc:source>2722-256X</dc:source>
	<dc:source>2088-8694</dc:source>
	<dc:source>10.11591/ijpeds.v17.i3</dc:source>
	<dc:language>eng</dc:language>
	<dc:relation>https://ijpeds.iaescore.com/index.php/IJPEDS/article/view/25269/15324</dc:relation>
	<dc:rights xml:lang="en-US">Copyright (c) 2026 Md Shishir Rahman, Siti Mahfuza Saimon, Shahrin Md Ayob, Muhammad Yusof Mohd Noor</dc:rights>
	<dc:rights xml:lang="en-US">http://creativecommons.org/licenses/by-sa/4.0</dc:rights>
</oai_dc:dc>