Calculation of power losses in a frequency inverter

Al-Rawashdeh, Ayman Y.; Dunayev, Mikhail Pavlovich; Alzyoud, Khalaf Y.; Dovudov, Sarfaroz U.

doi:10.11591/ijpeds.v15.i3.pp1331-1338

Akses terbuka Jurnal SINTA 1

Calculation of power losses in a frequency inverter

International Journal of Power Electronics and Drive Systems · Vol. 15 No. 3 (2024) · hlm. 1331–1338

DOI: 10.11591/ijpeds.v15.i3.pp1331-1338
ISSN: 2722-256X, 2088-8694
Terbit: 2024-09-01
Penerbit: Institute of Advanced Engineering and Science
Bahasa: eng
Lisensi: creativecommons.org/licenses/by-sa/4.0

Abstrak

This study's main goal is to make a new simulation model of the power losses calculation block for frequency converter power switches that can correctly figure out the transistors and diodes' static and dynamic power losses in a 1.5 kW SIEMENS SINAMICS G110 semiconductor converter (SSG110SC). We use simulation modeling tools in the MATLAB/Simulink environment to look at the semiconductor circuits of a rectifier and an autonomous pulse-width modulation voltage inverter. The study presents analytical expressions describing static and dynamic power losses in power semiconductor diodes and transistors. We used polynomials to get close to the power characteristics of insulated-gate bipolar transistor or IGBTs and then used mathematical expressions to show how they depend on Erec (Ic), Vse (Ic), Vf (If), Eon (Ic), and Eoff (Ic). By utilizing the acquired expressions, a MATLAB/Simulink block was constructed to calculate static and dynamic power losses. as well as power loss dependences on switching frequency and load current, were computed utilizing the developable block system. By comparing the simulation outcomes of the present study to the data provided by the manufacturer, the results were validated. Specific diode and transistor characteristics can be accounted for by the method developed in the present study.

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18 penulis · 45 tautan kepenulisan bersama · 4 lintas organisasi

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Al-Balqa Applied University
Tafila Technical University
Afiliasi tidak diketahui

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Organisasi sama
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Garis lebih tebal = lebih banyak artikel bersama · lingkaran lebih besar = lebih banyak artikel

Tampilkan sebagai tabel

Rekan penulis	Organisasi	Artikel bersama
Jawdat S. Alkasassbeh	Al-Balqa Applied University	4
Ashraf Samarah	Al-Balqa Applied University	3
Ali Dalabeeh	Al-Balqa Applied University	2
Abdallah Ershoud Alzyoud	Afiliasi tidak diketahui	2
Hussein Ahmad Al-Ofeishat	Al-Balqa Applied University	2
Farouq M. Al-Taweel	Al-Balqa Applied University	2
Hisham Alrawashdeh	Tafila Technical University	2
Vlademer Е. Pavlov	Afiliasi tidak diketahui	2
Omar Albarbarawi	Al-Balqa Applied University	1
Ghazi Qaryouti	Afiliasi tidak diketahui	1
Afaq Hiary	Al-Balqa Applied University	1
Ameera Amayira	Al-Balqa Applied University	1
Hiba Asheesh	Al-Balqa Applied University	1
Vlademer E. Pavlov	Afiliasi tidak diketahui	1

Afiliasi berasal dari OpenAlex; metadata OAI-PMH jurnal tidak memuatnya. Penulis tanpa ID OpenAlex dicocokkan berdasarkan nama, sehingga dua orang bisa tergabung atau satu orang bisa terpisah.

Sumber metadata: OAI-PMH (metadata jurnal) http://ijpeds.iaescore.com/index.php/IJPEDS/oai, pertama di-harvest 8 Nov 2026, terakhir terlihat 8 Nov 2026.

Metadata asli (oai_dc)

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	<dc:title xml:lang="en-US">Calculation of power losses in a frequency inverter</dc:title>
	<dc:creator>Al-Rawashdeh, Ayman Y.</dc:creator>
	<dc:creator>Dunayev, Mikhail Pavlovich</dc:creator>
	<dc:creator>Alzyoud, Khalaf Y.</dc:creator>
	<dc:creator>Dovudov, Sarfaroz U.</dc:creator>
	<dc:subject xml:lang="en-US">dynamic losses; efficiency; frequency converter; inverter; rectifier</dc:subject>
	<dc:description xml:lang="en-US">This study's main goal is to make a new simulation model of the power losses calculation block for frequency converter power switches that can correctly figure out the transistors and diodes' static and dynamic power losses in a 1.5 kW SIEMENS SINAMICS G110 semiconductor converter (SSG110SC). We use simulation modeling tools in the MATLAB/Simulink environment to look at the semiconductor circuits of a rectifier and an autonomous pulse-width modulation voltage inverter. The study presents analytical expressions describing static and dynamic power losses in power semiconductor diodes and transistors. We used polynomials to get close to the power characteristics of insulated-gate bipolar transistor or IGBTs and then used mathematical expressions to show how they depend on Erec (Ic), Vse (Ic), Vf (If), Eon (Ic), and Eoff (Ic). By utilizing the acquired expressions, a MATLAB/Simulink block was constructed to calculate static and dynamic power losses. as well as power loss dependences on switching frequency and load current, were computed utilizing the developable block system. By comparing the simulation outcomes of the present study to the data provided by the manufacturer, the results were validated. Specific diode and transistor characteristics can be accounted for by the method developed in the present study.</dc:description>
	<dc:publisher xml:lang="en-US">Institute of Advanced Engineering and Science</dc:publisher>
	<dc:contributor xml:lang="en-US">no sponsor</dc:contributor>
	<dc:date>2024-09-01</dc:date>
	<dc:type>info:eu-repo/semantics/article</dc:type>
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	<dc:format>application/pdf</dc:format>
	<dc:identifier>https://ijpeds.iaescore.com/index.php/IJPEDS/article/view/21425</dc:identifier>
	<dc:identifier>10.11591/ijpeds.v15.i3.pp1331-1338</dc:identifier>
	<dc:source xml:lang="en-US">International Journal of Power Electronics and Drive Systems (IJPEDS); Vol 15, No 3: September 2024; 1331-1338</dc:source>
	<dc:source>2722-256X</dc:source>
	<dc:source>2088-8694</dc:source>
	<dc:source>10.11591/ijpeds.v15.i3</dc:source>
	<dc:language>eng</dc:language>
	<dc:relation>https://ijpeds.iaescore.com/index.php/IJPEDS/article/view/21425/14594</dc:relation>
	<dc:rights xml:lang="en-US">Copyright (c) 2024 Ayman Yasseen Al-Rawashdeh, M. P. Dunayev, S. U. Dovudov</dc:rights>
	<dc:rights xml:lang="en-US">http://creativecommons.org/licenses/by-sa/4.0</dc:rights>
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