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Two-stage S-Band LNA Development Using Non-Simultaneous Conjugate Match Technique

Journal of ICT Research and Applications (JICTRA) · Vol. 13 No. 3 (2019) · pp. 213–227

DOI
10.5614/itbj.ict.res.appl.2019.13.3.3
ISSN
2338-5499, 2337-5787
Published
2019-12-31
Publisher
DRI - ITB
Language
eng

Abstract

This paper presents the development of a two-stage low noise amplifier (LNA) operating at the S-band frequency that is implemented using the non-simultaneous conjugate match (NSCM) technique. The motivation of this work was to solve the issue of the gain of LNAs designed using the most commonly used technique, i.e. simultaneous conjugate match (SCM), which often produce an increase of other parameter values, i.e. noise figure and voltage standing wave ratio (VSWR). Prior to hardware implementation, the circuit simulation software Advanced Design System (ADS) was applied to design the two-stage S-band LNA and to determine the desired trade-off between its parameters. The proposed two-stage S-band LNA was deployed on an Arlon DiClad527 using a bipolar junction transistor (BJT), type BFP420. Meanwhile, to achieve impedances that match the two-stage S-band LNA circuit, microstrip lines were employed at the input port, the interstage, and the output port. Experimental characterization showed that the realized two-stage S-band LNA produced a gain of 22.77 dB and a noise figure of 3.58 dB at a frequency of 3 GHz. These results were 6.1 dB lower than the simulated gain and 0.76 dB higher than the simulated noise figure respectively.

Keywords

Collaboration network of the authors

21 authors · 38 co-authorship links · 21 across different organisations

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  • Bandung Institute of Technology
  • Telkom University
  • Indonesian Institute of Sciences
  • Pakuan University
  • State University of Jakarta
  • Universitas Sangga Buana YPKP
  • Sumatera Institute of Technology
  • Other organisations
  • Different organisations
  • Same organisation
  • Affiliation unknown
  • Thicker line = more joint articles · bigger circle = more articles
Show as table
Co-authorOrganisationJoint articles
Rheyuniarto Sahlendar AsthanSumatera Institute of Technology2
Budi SyihabuddinTelkom University2
Sugihartono SugihartonoBandung Institute of Technology1
Adit KurniawanBandung Institute of Technology1
Baso MaruddaniState University of Jakarta1
Dida Tuhu PutrantoTelkom University1
Heroe WijantoTelkom University1
Hartuti MistialustinaUniversitas Sangga Buana YPKP1
Chairunnisa ChairunnisaBandung Institute of Technology1
Zulfi ZulfiBandung Institute of Technology1
Joko SuryanaBandung Institute of Technology1
Muhammad ShalahuddinUniversitas Teknologi Bandung1
Wikan Danar SunindyoBandung Institute of Technology1
Kridanto SurendroBandung Institute of Technology1
Agus Dwi PrasetyoBandung Institute of Technology1
Deny HamdaniBandung Institute of Technology1

Affiliations come from OpenAlex; journal OAI-PMH metadata carries none. Authors without an OpenAlex ID are matched by name, which can merge or split people.

Metadata source: OAI-PMH (metadata jurnal) https://journals.itb.ac.id/index.php/jictra/oai, first harvested 26 Okt 2026, last seen 26 Okt 2026.
Original metadata (oai_dc) 
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	<dc:title xml:lang="en-US">Two-stage S-Band LNA Development Using Non-Simultaneous Conjugate Match Technique</dc:title>
	<dc:creator>Munir, Achmad</dc:creator>
	<dc:creator>Taryana, Yana</dc:creator>
	<dc:creator>Yunus, Mochamad</dc:creator>
	<dc:creator>Nusantara, Hardi</dc:creator>
	<dc:creator>Effendi, Mohammad Ridwan</dc:creator>
	<dc:subject xml:lang="en-US">bipolar junction transistor (BJT)</dc:subject>
	<dc:subject xml:lang="en-US">impedance matching network</dc:subject>
	<dc:subject xml:lang="en-US">microstrip line</dc:subject>
	<dc:subject xml:lang="en-US">non SCM technique</dc:subject>
	<dc:subject xml:lang="en-US">S-band frequency</dc:subject>
	<dc:subject xml:lang="en-US">two-stage low noise amplifier (LNA)</dc:subject>
	<dc:description xml:lang="en-US">This paper presents the development of a two-stage low noise amplifier (LNA) operating at the S-band frequency that is implemented using the non-simultaneous conjugate match (NSCM) technique. The motivation of this work was to solve the issue of the gain of LNAs designed using the most commonly used technique, i.e. simultaneous conjugate match (SCM), which often produce an increase of other parameter values, i.e. noise figure and voltage standing wave ratio (VSWR). Prior to hardware implementation, the circuit simulation software Advanced Design System (ADS) was applied to design the two-stage S-band LNA and to determine the desired trade-off between its parameters. The proposed two-stage S-band LNA was deployed on an Arlon DiClad527 using a bipolar junction transistor (BJT), type BFP420. Meanwhile, to achieve impedances that match the two-stage S-band LNA circuit, microstrip lines were employed at the input port, the interstage, and the output port. Experimental characterization showed that the realized two-stage S-band LNA produced a gain of 22.77 dB and a noise figure of 3.58 dB at a frequency of 3 GHz. These results were 6.1 dB lower than the simulated gain and 0.76 dB higher than the simulated noise figure respectively.</dc:description>
	<dc:publisher xml:lang="en-US">DRI - ITB</dc:publisher>
	<dc:date>2019-12-31</dc:date>
	<dc:type>info:eu-repo/semantics/article</dc:type>
	<dc:type>info:eu-repo/semantics/publishedVersion</dc:type>
	<dc:type xml:lang="en-US">Peer-reviewed Article</dc:type>
	<dc:format>application/pdf</dc:format>
	<dc:identifier>https://journals.itb.ac.id/index.php/jictra/article/view/10289</dc:identifier>
	<dc:identifier>10.5614/itbj.ict.res.appl.2019.13.3.3</dc:identifier>
	<dc:source xml:lang="en-US">Journal of ICT Research and Applications; Vol. 13 No. 3 (2019); 213-227</dc:source>
	<dc:source>2338-5499</dc:source>
	<dc:source>2337-5787</dc:source>
	<dc:language>eng</dc:language>
	<dc:relation>https://journals.itb.ac.id/index.php/jictra/article/view/10289/4527</dc:relation>
</oai_dc:dc>