Melola Discovery

← Melola Discovery

Akses terbuka Jurnal SINTA 1

Hydrothermal Growth of Titanium Dioxide Thin Films on Conductive Substrates: Insights into Optical Properties

VALENSI · Vol. ume No. 2 (2025) · hlm. 284–290

DOI
10.15408/jkv.v11i2.46532
ISSN
2548-3013, 2460-6065
Terbit
2025-12-22
Penerbit
Department of Chemistry, Faculty of Science and Technology Syarif Hidayatullah Jakarta State Islamic University
Bahasa
eng
Lisensi
creativecommons.org/licenses/by-sa/4.0

Abstrak

Titanium dioxide (TiO2) thin films were deposited on fluorine-doped tin oxide (F:SnO2/FTO) conducting glass using the hydrothermal method. The X-ray diffraction (XRD) patterns confirmed that the TiO2 thin films crystallize in the rutile phase, exhibiting high crystallinity. The Fourier Transform Infrared (FTIR) spectrum confirmed the interaction between the FTO substrate and the TiO2 layer, indicated by an absorption peak in the range of 400 cm-1 to 900 cm-1. These peaks correspond to Ti–O–Ti and Ti–O vibrations within the octahedral structure of TiO₆ and Sn–O–Ti vibrations, indicating the bonding between the FTO substrate and the TiO₂ surface. Scanning Electron Microscopy (SEM) images provide detailed visualization of the morphological features of the TiO₂ thin films deposited on FTO glass, as evidenced by the prolonged hydrothermal processing resulting in the formation of thicker films. In addition, the interface between the TiO₂ layer and the FTO substrate is well-defined and continuous. UV-Visible Diffuse Reflectance Spectroscopy (UV-Vis DRS) analysis showed enhanced light absorption with increasing film thickness, which was also visually noticeable. As a result, the band gap energy decreases with increasing thickness, indicating that less energy is required to excite electrons from the valence band to the conduction band.

Kata kunci

Jaringan kolaborasi para penulis

35 penulis · 125 tautan kepenulisan bersama · 16 lintas organisasi

Arahkan kursor atau ketuk sebuah nama untuk menyorot rekan penulisnya. Klik dua kali untuk membuka halaman penulis.

  • Andalas University
  • Universitas Jambi
  • Institut Teknologi Sepuluh Nopember
  • Bandung Institute of Technology
  • Organisasi berbeda
  • Organisasi sama
  • Afiliasi tidak diketahui
  • Garis lebih tebal = lebih banyak artikel bersama · lingkaran lebih besar = lebih banyak artikel
Tampilkan sebagai tabel
Rekan penulisOrganisasiArtikel bersama
Syukri SyukriAndalas University4
Upita SeptianiAndalas University4
Diana Vanda WelliaAndalas University2
Kevin SeptiogaAndalas University2
Syukri AriefAndalas University2
Fadhil FerdianAndalas University2
Yetria RildaAndalas University2
Revi Maylina TanjungUniversitas Jambi1
Teguh SetyawanUniversitas Jambi1
Rani KhoiriyahUniversitas Jambi1
Widya Twiny RizkiUniversitas Jambi1
Defia Indah PermatasariUniversitas Jambi1
Nur JayaUniversitas Jambi1
Fiqri Al FaruqiUniversitas Jambi1
M. Ardi DayaUniversitas Jambi1
Elika FitrianiUniversitas Jambi1
Zil ArifahAndalas University1
Syafrizayanti SyafrizayantiAndalas University1
Atthar Luqman IvansyahBandung Institute of Technology1
Yuly KusumawatiInstitut Teknologi Sepuluh Nopember1
Evan AttalarioAndalas University1
Resha Mutia RahmaInstitut Teknologi Sepuluh Nopember1
Emil SalimAndalas University1
Adlis SantoniAndalas University1
Merida SaputriAndalas University1
Rahmadhini AnwarAndalas University1
Nova AndrianiAndalas University1
Rathesa NajeelaAndalas University1
Thalabul IlmiAndalas University1

Afiliasi berasal dari OpenAlex; metadata OAI-PMH jurnal tidak memuatnya. Penulis tanpa ID OpenAlex dicocokkan berdasarkan nama, sehingga dua orang bisa tergabung atau satu orang bisa terpisah.

Sumber metadata: OAI-PMH (metadata jurnal) http://journal.uinjkt.ac.id/index.php/valensi/oai, pertama di-harvest 10 Nov 2026, terakhir terlihat 10 Nov 2026.
Metadata asli (oai_dc) 
<oai_dc:dc xmlns="http://www.openarchives.org/OAI/2.0/" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/  http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
	<dc:title xml:lang="en">Hydrothermal Growth of Titanium Dioxide Thin Films on Conductive Substrates: Insights into Optical Properties</dc:title>
	<dc:creator xml:lang="en">Putri, Yulia Eka</dc:creator>
	<dc:creator xml:lang="en">Wendari, Tio Putra</dc:creator>
	<dc:creator xml:lang="en">Wulandari, Retno Dyah</dc:creator>
	<dc:creator xml:lang="en">Muharmi, Melvi</dc:creator>
	<dc:creator xml:lang="en">Efdi, Mai</dc:creator>
	<dc:creator xml:lang="en">Refinel, Refinel</dc:creator>
	<dc:subject xml:lang="en">Hydrothermal</dc:subject>
	<dc:subject xml:lang="en">rutile</dc:subject>
	<dc:subject xml:lang="en">thin film</dc:subject>
	<dc:subject xml:lang="en">TiO2</dc:subject>
	<dc:description xml:lang="en">Titanium dioxide (TiO2) thin films were deposited on fluorine-doped tin oxide (F:SnO2/FTO) conducting glass using the hydrothermal method. The X-ray diffraction (XRD) patterns confirmed that the TiO2 thin films crystallize in the rutile phase, exhibiting high crystallinity. The Fourier Transform Infrared (FTIR) spectrum confirmed the interaction between the FTO substrate and the TiO2 layer, indicated by an absorption peak in the range of 400 cm-1 to 900 cm-1. These peaks correspond to Ti–O–Ti and Ti–O vibrations within the octahedral structure of TiO₆ and Sn–O–Ti vibrations, indicating the bonding between the FTO substrate and the TiO₂ surface. Scanning Electron Microscopy (SEM) images provide detailed visualization of the morphological features of the TiO₂ thin films deposited on FTO glass, as evidenced by the prolonged hydrothermal processing resulting in the formation of thicker films. In addition, the interface between the TiO₂ layer and the FTO substrate is well-defined and continuous. UV-Visible Diffuse Reflectance Spectroscopy (UV-Vis DRS) analysis showed enhanced light absorption with increasing film thickness, which was also visually noticeable. As a result, the band gap energy decreases with increasing thickness, indicating that less energy is required to excite electrons from the valence band to the conduction band.</dc:description>
	<dc:publisher xml:lang="en">Department of Chemistry, Faculty of Science and Technology Syarif Hidayatullah Jakarta State Islamic University</dc:publisher>
	<dc:date>2025-12-22</dc:date>
	<dc:type>info:eu-repo/semantics/article</dc:type>
	<dc:type>info:eu-repo/semantics/publishedVersion</dc:type>
	<dc:format>application/pdf</dc:format>
	<dc:identifier>https://journal.uinjkt.ac.id/index.php/valensi/article/view/46532</dc:identifier>
	<dc:identifier>10.15408/jkv.v11i2.46532</dc:identifier>
	<dc:source xml:lang="en">Jurnal Kimia Valensi; Jurnal Kimia VALENSI,  Volume 11, No. 2, November 2025; 284-290</dc:source>
	<dc:source>2548-3013</dc:source>
	<dc:source>2460-6065</dc:source>
	<dc:language>eng</dc:language>
	<dc:relation>https://journal.uinjkt.ac.id/index.php/valensi/article/view/46532/18545</dc:relation>
	<dc:rights xml:lang="en">Copyright (c) 2025 Yulia Eka Putri, Tio Putra Wendari, Retno Dyah Wulandari, Melvi Muharmi, Mai Efdi, Refinel Refinel</dc:rights>
	<dc:rights xml:lang="en">https://creativecommons.org/licenses/by-sa/4.0</dc:rights>
</oai_dc:dc>