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Effect of Humidity on Partial Discharge Characteristics of Epoxy/Boron Nitride Nanocomposite under High Voltage Stress

International Journal of Electrical and Computer Engineering (IJECE) · Vol. 7 No. 3 (2017)

DOI
10.11591/ijece.v7i3.pp1562-1567
ISSN
2088-8708, 2088-8708
Published
2017-06-01
Publisher
Institute of Advanced Engineering and Science
License
creativecommons.org/licenses/by-nc/4.0

Abstract

Partial discharge (PD) may lead to the degradation of insulating materials and affect the lifetime of high voltage equipment. This paper describes the effect of relative humidity on PD characteristic of epoxy/boron nitride (BN) nanocomposite under high voltage (HV) stress. In this work, CIGRE Method II was utilized as an electrode configuration. BN nanofiller was chosen because of its high insulating properties with high thermal conductivity. The PD characteristics such as PD charge magnitude, PD number or occurrence, and average of PD charge during certain of ageing time under HV stress against relative humidity were examined. The results revealed that PD number of humid samples is higher about 8~14% compared to the normal ones. It is considered due to the decrease of surface resistance of the humid samples. The PD charge magnitudes of humid samples are slightly higher compared to the normal ones. The epoxy/BN nanocomposite has lesser PD number and magnitude compared to the neat epoxy samples.

Collaboration network of the authors

40 authors · 131 co-authorship links · 67 across different organisations · showing the 40 most connected

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  • University of Technology Malaysia
  • Universiti Teknikal Malaysia Melaka
  • Jakarta Global University
  • Jenderal Soedirman University
  • Bandung Institute of Technology
  • Universiti Sains Malaysia
  • IPB University
  • Other organisations
  • Affiliation unknown
  • Different organisations
  • Same organisation
  • Affiliation unknown
  • Thicker line = more joint articles · bigger circle = more articles
Show as table
Co-authorOrganisationJoint articles
Nehaluddin AhmadUniversity of Technology Malaysia5
Siti Sufiah Abd WahidUniversiti Teknologi MARA5
Mohd Fikri Hilmi Mohd TaibUniversity of Technology Malaysia5
Mohd Hafiez Izzwan SaadUniversiti Malaysia Sarawak5
Izzah Hazirah ZakariaUniversity of Technology Malaysia3
N. A. AwangUniversity of Technology Malaysia3
Mehrdad MokhtariUniversity of Technology Malaysia2
Zulkurnain Abdul‐MalekUniversity of Technology Malaysia2
Chin‐Leong WooiUniversity of Technology Malaysia2
Behnam SalimiUniversity of Technology Malaysia2
M. A. M. PiahUniversity of Technology Malaysia2
N. A. OthmanUniversity of Technology Malaysia2
Nasir A. Al-geelaniAffiliation unknown2
M. S. Mohd Fua’adUniversity of Technology Malaysia2
Rosyid Ridlo Al-HakimIPB University1
Muhammad Haikal SatriaUniversity of Technology Malaysia1
Agung PangestuJakarta Global University1
Hexa Apriliana HidayahJenderal Soedirman University1
Glagah E. SetyowisnuBandung Institute of Technology1
Prihantini PrihantiniBandung Institute of Technology1
Antonius Darma SetiawanJakarta Global University1
Esa Rinjani Cantika PutriJenderal Soedirman University1
Mohd Aizam TalibUniversity of Technology Malaysia1
Z.A. MalekUniversity of Technology Malaysia1
B.T. PhungUNSW Sydney1
M. Hilman AhmadUniversity of Technology Malaysia1
Hidayat ZainuddinUniversiti Teknikal Malaysia Melaka1
Sharin Ab GhaniUniversiti Teknikal Malaysia Melaka1
Imran Sutan ChairulUniversiti Teknikal Malaysia Melaka1
Zulkarnain Ahmad NoordenUniversity of Technology Malaysia1
Muhammad Ilman Hakimi Chua AbdullahUniversiti Teknikal Malaysia Melaka1
A. H. M. NasibUniversity of Technology Malaysia1
Zainuddin NawawiSriwijaya University1

Affiliations come from OpenAlex; journal OAI-PMH metadata carries none. Authors without an OpenAlex ID are matched by name, which can merge or split people.

This record comes from Crossref (what the publisher deposited), because the journal's own OAI-PMH endpoint could not be harvested.

Metadata source: Crossref API (cadangan, berdasarkan ISSN) https://api.crossref.org/journals/2088-8708/works, first harvested 27 Okt 2026, last seen 27 Okt 2026.
Metadata as oai_dc, converted from Crossref
<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/"><dc:title>Effect of Humidity on Partial Discharge Characteristics of Epoxy/Boron Nitride Nanocomposite under High Voltage Stress</dc:title><dc:creator>Awang, Noor ‘Aliaa</dc:creator><dc:creator>Suhaini, Faris Akmal</dc:creator><dc:creator>Arief, Yanuar Z.</dc:creator><dc:creator>Ahmad, Mohd Hafizi</dc:creator><dc:creator>Ahmad, Noor Azlinda</dc:creator><dc:creator>Muhamad, Nor Asiah</dc:creator><dc:creator>Adzis, Zuraimy</dc:creator><dc:description>&lt;jats:p&gt;Partial discharge (PD) may lead to the degradation of insulating materials and affect the lifetime of high voltage equipment. This paper describes the effect of relative humidity on PD characteristic of epoxy/boron nitride (BN) nanocomposite under high voltage (HV) stress. In this work, CIGRE Method II was utilized as an electrode configuration. BN nanofiller was chosen because of its high insulating properties with high thermal conductivity. The PD characteristics such as PD charge magnitude, PD number or occurrence, and average of PD charge during certain of ageing time under HV stress against relative humidity were examined. The results revealed that PD number of humid samples is higher about 8~14% compared to the normal ones. It is considered due to the decrease of surface resistance of the humid samples. The PD charge magnitudes of humid samples are slightly higher compared to the normal ones. The epoxy/BN nanocomposite has lesser PD number and magnitude compared to the neat epoxy samples.&lt;/jats:p&gt;</dc:description><dc:publisher>Institute of Advanced Engineering and Science</dc:publisher><dc:date>2017-06-01</dc:date><dc:type>info:eu-repo/semantics/article</dc:type><dc:format>application/pdf</dc:format><dc:identifier>https://doi.org/10.11591/ijece.v7i3.pp1562-1567</dc:identifier><dc:identifier>10.11591/ijece.v7i3.pp1562-1567</dc:identifier><dc:source>International Journal of Electrical and Computer Engineering (IJECE); Vol 7 No 3 (2017); 1562</dc:source><dc:source>2088-8708</dc:source><dc:source>2088-8708</dc:source><dc:relation>http://ijece.iaescore.com/index.php/IJECE/article/viewFile/7523/6574</dc:relation><dc:rights>http://creativecommons.org/licenses/by-nc/4.0</dc:rights></oai_dc:dc>