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Low-Power D-Band CMOS Amplifier for Ultrahigh-Speed Wireless Communications

International Journal of Electrical and Computer Engineering (IJECE) · Vol. 8 No. 2 (2018)

DOI
10.11591/ijece.v8i2.pp933-938
ISSN
2088-8708, 2088-8708
Published
2018-04-01
Publisher
Institute of Advanced Engineering and Science
License
creativecommons.org/licenses/by-nc/4.0

Abstract

This paper presents a low-power D-Band amplifier suitable for ultrahigh-speed wireless communications. The three-stage fully differential amplifier with capacitive neutralization is fabricated in 40 nm CMOS provided by TSMC. Measurement results show that the D-band amplifier obtains a peak gain of 9.6 dB over a -3 dB bandwidth from 138 GHz to 164.5 GHz. It exhibits an output 1 dB compression point (OP1dB) of 1.5 dbm at the center frequency of 150 GHz. The amplifier consumes a low power of 27.3 mW from a 0.7 V supply voltage while its core occupies a chip area of 0.06 mm2.

Collaboration network of the authors

6 authors · 9 co-authorship links · 5 across different organisations

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  • Hiroshima University
  • Trung tâm Vũ trụ Việt Nam
  • VNU University of Engineering and Technology
  • Different organisations
  • Same organisation
  • Affiliation unknown
  • Thicker line = more joint articles · bigger circle = more articles
Show as table
Co-authorOrganisationJoint articles
Bach Gia DuongVNU University of Engineering and Technology1
The Anh Nguyen DinhTrung tâm Vũ trụ Việt Nam1
Huy Le XuanTrung tâm Vũ trụ Việt Nam1

Affiliations come from OpenAlex; journal OAI-PMH metadata carries none. Authors without an OpenAlex ID are matched by name, which can merge or split people.

This record comes from Crossref (what the publisher deposited), because the journal's own OAI-PMH endpoint could not be harvested.

Metadata source: Crossref API (cadangan, berdasarkan ISSN) https://api.crossref.org/journals/2088-8708/works, first harvested 27 Okt 2026, last seen 1 Nov 2026.
Metadata as oai_dc, converted from Crossref 
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