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CMOS Temperature Sensor with Programmable Temperature Range for Biomedical Applications

International Journal of Electrical and Computer Engineering (IJECE) · Vol. 8 No. 2 (2018)

DOI
10.11591/ijece.v8i2.pp946-953
ISSN
2088-8708, 2088-8708
Published
2018-04-01
Publisher
Institute of Advanced Engineering and Science
License
creativecommons.org/licenses/by-nc/4.0

Abstract

A CMOS temperature sensor circuit with programmable temperature range is proposed for biomedical applications. The proposed circuit consists of temperature sensor core circuit and programmable temperature range digital interface circuit. Both circuits are able to be operated at 1.0 V. The proposed temperature sensor circuit is operated in weak inversion region of MOSFETs. The proposed digital interface circuit converts current into time using Current-to-Time Converter (ITC) and converts time to digital data using counter. Temperature range can be programmed by adjusting pulse width of the trigger and clock frequency of counter. The proposed circuit was simulated using HSPICE with 1P, 5M, 3-wells, 0.18-μm CMOS process (BSIM3v3.2, LEVEL53). From the simulation of proposed circuit, temperature range is programmed to be 0 °C to 100 °C, it is obtained that resolution of the proposed circuit is 0.392 °C with -0.89/+0.29 °C inaccuracy and the total power consumption is 22.3 μW in 25 °C.

Collaboration network of the authors

9 authors · 16 co-authorship links

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  • University of Miyazaki
  • University of Brawijaya
  • Affiliation unknown
  • Different organisations
  • Same organisation
  • Affiliation unknown
  • Thicker line = more joint articles · bigger circle = more articles
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Co-authorOrganisationJoint articles
Zainul AbidinUniversity of Miyazaki6
Shota MagoUniversity of Miyazaki6
Ryoichi MiyauchiUniversity of Miyazaki4
Kenya KondoUniversity of Miyazaki2
Eko SetiawanUniversity of Brawijaya1
Sabriansyah Rizqika AkbarUniversity of Brawijaya1

Affiliations come from OpenAlex; journal OAI-PMH metadata carries none. Authors without an OpenAlex ID are matched by name, which can merge or split people.

This record comes from Crossref (what the publisher deposited), because the journal's own OAI-PMH endpoint could not be harvested.

Metadata source: Crossref API (cadangan, berdasarkan ISSN) https://api.crossref.org/journals/2088-8708/works, first harvested 27 Okt 2026, last seen 27 Okt 2026.
Metadata as oai_dc, converted from Crossref
<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/"><dc:title>CMOS Temperature Sensor with Programmable Temperature Range for Biomedical Applications</dc:title><dc:creator>Setiabudi, Agung</dc:creator><dc:creator>Tamura, Hiroki</dc:creator><dc:creator>Tanno, Koichi</dc:creator><dc:description>&lt;jats:p&gt;&amp;lt;div class="page" title="Page 1"&amp;gt;&amp;lt;div class="layoutArea"&amp;gt;&amp;lt;div class="column"&amp;gt;&amp;lt;p class="p1"&amp;gt;&amp;lt;span class="s1"&amp;gt;A CMOS temperature sensor circuit with programmable temperature range is proposed for biomedical applications. The proposed circuit consists of temperature sensor core circuit and programmable temperature range digital interface circuit. Both circuits are able to be operated at 1.0 V. The proposed temperature sensor circuit is operated in weak inversion region of MOSFETs. The proposed digital interface circuit converts current into time using Current-to-Time Converter (ITC) and converts time to digital data using counter. Temperature range can be programmed by adjusting pulse width of the trigger and clock frequency of counter. The proposed circuit was simulated using HSPICE with 1P, 5M, 3-wells, 0.18-μm CMOS process (BSIM3v3.2, LEVEL53). From the simulation of proposed circuit, temperature range is programmed to be 0 °C to 100 °C, it is obtained that resolution of the proposed circuit is 0.392 °C with -0.89/+0.29 °C inaccuracy and the total power consumption is 22.3 μW in 25 °C.&amp;lt;span class="Apple-converted-space"&amp;gt; &amp;lt;/span&amp;gt;&amp;lt;/span&amp;gt;&amp;lt;/p&amp;gt;&amp;lt;/div&amp;gt;&amp;lt;/div&amp;gt;&amp;lt;/div&amp;gt;&lt;/jats:p&gt;</dc:description><dc:publisher>Institute of Advanced Engineering and Science</dc:publisher><dc:date>2018-04-01</dc:date><dc:type>info:eu-repo/semantics/article</dc:type><dc:format>application/pdf</dc:format><dc:identifier>https://doi.org/10.11591/ijece.v8i2.pp946-953</dc:identifier><dc:identifier>10.11591/ijece.v8i2.pp946-953</dc:identifier><dc:source>International Journal of Electrical and Computer Engineering (IJECE); Vol 8 No 2 (2018); 946</dc:source><dc:source>2088-8708</dc:source><dc:source>2088-8708</dc:source><dc:relation>http://ijece.iaescore.com/index.php/IJECE/article/viewFile/10334/10671</dc:relation><dc:rights>http://creativecommons.org/licenses/by-nc/4.0</dc:rights></oai_dc:dc>