Melola Discovery

← Melola Discovery

Open access Jurnal SINTA 1

0.5 GHz-1.5 GHz Bandwidth 10W GaN HEMT RF Power Amplifier Design

International Journal of Electrical and Computer Engineering (IJECE) · Vol. 8 No. 3 (2018)

DOI
10.11591/ijece.v8i3.pp1837-1843
ISSN
2088-8708, 2088-8708
Published
2018-06-01
Publisher
Institute of Advanced Engineering and Science
License
creativecommons.org/licenses/by-nc/4.0

Abstract

With the current development in wireless communication technology, the need for a wide bandwith in RF power amplifier (RF PA) is an essential. In this paper, the design and simulation of 10W GaN HEMT wideband RF PA will be presented. The Source-Pull and Load-Pull technique was used to design the input and output matching network of the RF PA. From the simulation, the RF PA achieved a flat gain between 15dB to 17dB from 0.5GHz to 1.5GHz. At 1.5GHz, the drain efficiency is simulated to achieve 36% at the output power of 40 dBm while the power added efficiency (PAE) was found to be 28.2%.

Collaboration network of the authors

10 authors · 31 co-authorship links · 13 across different organisations

Hover or tap a name to highlight its co-authors. Double-click to open the author's page.

  • Multimedia University
  • National University of Malaysia
  • Universiti Sains Islam Malaysia
  • Istanbul Technical University
  • Affiliation unknown
  • Different organisations
  • Same organisation
  • Affiliation unknown
  • Thicker line = more joint articles · bigger circle = more articles
Show as table
Co-authorOrganisationJoint articles
Fareha NizamMultimedia University1
Mardeni RosleeMultimedia University1
Prince Ugochukwu NmenmeMultimedia University1
Keshvinder SinghMultimedia University1
Hafizal MohamadUniversiti Sains Islam Malaysia1
Anwar Faizd OsmanAffiliation unknown1
Ibraheem Abdullah Mohammed ShayeaIstanbul Technical University1

Affiliations come from OpenAlex; journal OAI-PMH metadata carries none. Authors without an OpenAlex ID are matched by name, which can merge or split people.

This record comes from Crossref (what the publisher deposited), because the journal's own OAI-PMH endpoint could not be harvested.

Metadata source: Crossref API (cadangan, berdasarkan ISSN) https://api.crossref.org/journals/2088-8708/works, first harvested 27 Okt 2026, last seen 27 Okt 2026.
Metadata as oai_dc, converted from Crossref 
<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/"><dc:title>0.5 GHz-1.5 GHz Bandwidth 10W GaN HEMT RF Power Amplifier Design</dc:title><dc:creator>Ilamaran, Shiva Ghandi Isma</dc:creator><dc:creator>Yusoff, Zubaida</dc:creator><dc:creator>Sampe, Jahariah</dc:creator><dc:description>&lt;jats:p&gt;With the current development in wireless communication technology, the need for a wide bandwith in RF power amplifier (RF PA) is an essential. In this paper, the design and simulation of 10W GaN HEMT wideband RF PA will be presented. The Source-Pull and Load-Pull technique was used to design the input and output matching network of the RF PA. From the simulation, the RF PA achieved a flat gain between 15dB to 17dB from 0.5GHz to 1.5GHz. At 1.5GHz, the drain efficiency is simulated to achieve 36% at the output power of 40 dBm while the power added efficiency (PAE) was found to be 28.2%.&lt;/jats:p&gt;</dc:description><dc:publisher>Institute of Advanced Engineering and Science</dc:publisher><dc:date>2018-06-01</dc:date><dc:type>info:eu-repo/semantics/article</dc:type><dc:format>application/pdf</dc:format><dc:identifier>https://doi.org/10.11591/ijece.v8i3.pp1837-1843</dc:identifier><dc:identifier>10.11591/ijece.v8i3.pp1837-1843</dc:identifier><dc:source>International Journal of Electrical and Computer Engineering (IJECE); Vol 8 No 3 (2018); 1837</dc:source><dc:source>2088-8708</dc:source><dc:source>2088-8708</dc:source><dc:relation>http://ijece.iaescore.com/index.php/IJECE/article/viewFile/11790/8724</dc:relation><dc:rights>http://creativecommons.org/licenses/by-nc/4.0</dc:rights></oai_dc:dc>