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Modeling of a Microwave Amplifier Operating around 11 GHz for Radar Applications

International Journal of Electrical and Computer Engineering (IJECE) · Vol. 8 No. 5 (2018)

DOI
10.11591/ijece.v8i5.pp3496-3503
ISSN
2088-8708, 2088-8708
Published
2018-10-01
Publisher
Institute of Advanced Engineering and Science
License
creativecommons.org/licenses/by-nc/4.0

Abstract

The low noise amplifier is one of the basic functional blocks in communication systems. The main interest of the LNA at the input of the analog processing chain is to amplify the signal without adding significant noise. In this work, we have modeled a LNA for radar reception systems operating around 11 GHz, using the technique of impedance transformations with Smith chart utility. The type of transistor used is: the transistor HEMT AFP02N2-00 of Alpha Industries®. The results show that the modeled amplifier has a gain greater than 20 dB, a noise figure less than 2 dB, input and output reflection coefficients lower than -20 dB and unconditional stability.

Collaboration network of the authors

20 authors · 30 co-authorship links · 14 across different organisations

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  • Université Moulay Ismail de Meknes
  • Mohammed V University
  • Université Sultan Moulay Slimane
  • Université Ibn-Tofail
  • Ecole Mohammadia d'Ingénieurs
  • Abdelmalek Essaâdi University
  • Different organisations
  • Same organisation
  • Affiliation unknown
  • Thicker line = more joint articles · bigger circle = more articles
Show as table
Co-authorOrganisationJoint articles
Zineb MekriniUniversité Moulay Ismail de Meknes3
Soufiane OukiliUniversité Moulay Ismail de Meknes2
Loubna BerrichMohammed V University2
Adil SaadiUniversité Moulay Ismail de Meknes2
Mohammed Amine IhedraneUniversité Moulay Ismail de Meknes1
El Fadl AdibaUniversité Ibn-Tofail1
Nejwa El MaammarUniversité Moulay Ismail de Meknes1
Jaouad FoshiUniversité Moulay Ismail de Meknes1
Asmae BabayaUniversité Moulay Ismail de Meknes1
Toulali IslamMohammed V University1
Aziz El FatimiMohammed V University1
Youssef BaalaUniversité Moulay Ismail de Meknes1
Mehdi GuessousEcole Mohammadia d'Ingénieurs1
Ibrahime Hassan NejdiUniversité Sultan Moulay Slimane1
Youssef RhaziUniversité Sultan Moulay Slimane1
Mustapha Ait LafkihUniversité Sultan Moulay Slimane1
Mohammed LamsalliAbdelmalek Essaâdi University1

Affiliations come from OpenAlex; journal OAI-PMH metadata carries none. Authors without an OpenAlex ID are matched by name, which can merge or split people.

This record comes from Crossref (what the publisher deposited), because the journal's own OAI-PMH endpoint could not be harvested.

Metadata source: Crossref API (cadangan, berdasarkan ISSN) https://api.crossref.org/journals/2088-8708/works, first harvested 27 Okt 2026, last seen 27 Okt 2026.
Metadata as oai_dc, converted from Crossref
<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/"><dc:title>Modeling of a Microwave Amplifier Operating around 11 GHz for Radar Applications</dc:title><dc:creator>Lahsaini, Mohammed</dc:creator><dc:creator>Zenkouar, Lahbib</dc:creator><dc:creator>Bri, Seddik</dc:creator><dc:description>&lt;jats:p&gt;The low noise amplifier is one of the basic functional blocks in communication systems. The main interest of the LNA at the input of the analog processing chain is to amplify the signal without adding significant noise. In this work, we have modeled a LNA for radar reception systems operating around 11 GHz, using the technique of impedance transformations with Smith chart utility. The type of transistor used is: the transistor HEMT AFP02N2-00 of Alpha Industries®. The results show that the modeled amplifier has a gain greater than 20 dB, a noise figure less than 2 dB, input and output reflection coefficients lower than -20 dB and unconditional stability.&lt;/jats:p&gt;</dc:description><dc:publisher>Institute of Advanced Engineering and Science</dc:publisher><dc:date>2018-10-01</dc:date><dc:type>info:eu-repo/semantics/article</dc:type><dc:format>application/pdf</dc:format><dc:identifier>https://doi.org/10.11591/ijece.v8i5.pp3496-3503</dc:identifier><dc:identifier>10.11591/ijece.v8i5.pp3496-3503</dc:identifier><dc:source>International Journal of Electrical and Computer Engineering (IJECE); Vol 8 No 5 (2018); 3496</dc:source><dc:source>2088-8708</dc:source><dc:source>2088-8708</dc:source><dc:relation>http://ijece.iaescore.com/index.php/IJECE/article/viewFile/7859/9530</dc:relation><dc:rights>http://creativecommons.org/licenses/by-nc/4.0</dc:rights></oai_dc:dc>