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High Speed and Low Pedestal Error Bootstrapped CMOS Sample and Hold Circuit

International Journal of Electrical and Computer Engineering (IJECE) · Vol. 8 No. 6 (2018)

DOI
10.11591/ijece.v8i6.pp4148-4156
ISSN
2088-8708, 2088-8708
Published
2018-12-01
Publisher
Institute of Advanced Engineering and Science
License
creativecommons.org/licenses/by-nc/4.0

Abstract

A new high speed, low pedestal error bootstrapped CMOS sample and hold (S/H) circuit is proposed for high speed analog-to-digital converter (ADC). The proposed circuit is made up of CMOS transmission gate (TG) switch and two new bootstrap circuits for each transistor in TG switch. Both TG switch and bootstrap circuits are used to decrease channel charge injection and on-resistance input signal dependency. In result, distortion can be reduced. The decrease of channel charge injection input signal dependency also makes the minimizing of pedestal error by adjusting the width of NMOS and PMOS of TG switch possible. The performance of the proposed circuit was evaluated using HSPICE 0.18-m CMOS process. For 50 MHz sinusoidal 1 V peak-to-peak differential input signal with a 1 GHz sampling clock, the proposed circuit achieves 2.75 mV maximum pedestal error, 0.542 mW power consumption, 90.87 dB SNR, 73.50 SINAD which is equal to 11.92 bits ENOB, -73.58 dB THD, and 73.95 dB SFDR.

Collaboration network of the authors

9 authors · 16 co-authorship links

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  • University of Miyazaki
  • University of Brawijaya
  • Affiliation unknown
  • Different organisations
  • Same organisation
  • Affiliation unknown
  • Thicker line = more joint articles · bigger circle = more articles
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Co-authorOrganisationJoint articles
Zainul AbidinUniversity of Miyazaki6
Shota MagoUniversity of Miyazaki6
Ryoichi MiyauchiUniversity of Miyazaki4
Kenya KondoUniversity of Miyazaki2
Eko SetiawanUniversity of Brawijaya1
Sabriansyah Rizqika AkbarUniversity of Brawijaya1

Affiliations come from OpenAlex; journal OAI-PMH metadata carries none. Authors without an OpenAlex ID are matched by name, which can merge or split people.

This record comes from Crossref (what the publisher deposited), because the journal's own OAI-PMH endpoint could not be harvested.

Metadata source: Crossref API (cadangan, berdasarkan ISSN) https://api.crossref.org/journals/2088-8708/works, first harvested 27 Okt 2026, last seen 27 Okt 2026.
Metadata as oai_dc, converted from Crossref
<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/"><dc:title>High Speed and Low Pedestal Error Bootstrapped CMOS Sample and Hold Circuit</dc:title><dc:creator>Setiabudi, Agung</dc:creator><dc:creator>Tamura, Hiroki</dc:creator><dc:creator>Tanno, Koichi</dc:creator><dc:description>&lt;jats:p&gt;&amp;lt;p&amp;gt;A new high speed, low pedestal error bootstrapped CMOS sample and hold (S/H) circuit is proposed for high speed analog-to-digital converter (ADC). The proposed circuit is made up of CMOS transmission gate (TG) switch and two new bootstrap circuits for each transistor in TG switch. Both TG switch and bootstrap circuits are used to decrease channel charge injection and on-resistance input signal dependency. In result, distortion can be reduced. The decrease of channel charge injection input signal dependency also makes the minimizing of pedestal error by adjusting the width of NMOS and PMOS of TG switch possible. The performance of the proposed circuit was evaluated using HSPICE 0.18-m CMOS process. For 50 MHz sinusoidal 1 V peak-to-peak differential input signal with a 1 GHz sampling clock, the proposed circuit achieves 2.75 mV maximum pedestal error, 0.542 mW power consumption, 90.87 dB SNR, 73.50 SINAD which is equal to 11.92 bits ENOB, -73.58 dB THD, and 73.95 dB SFDR.&amp;lt;/p&amp;gt;&lt;/jats:p&gt;</dc:description><dc:publisher>Institute of Advanced Engineering and Science</dc:publisher><dc:date>2018-12-01</dc:date><dc:type>info:eu-repo/semantics/article</dc:type><dc:format>application/pdf</dc:format><dc:identifier>https://doi.org/10.11591/ijece.v8i6.pp4148-4156</dc:identifier><dc:identifier>10.11591/ijece.v8i6.pp4148-4156</dc:identifier><dc:source>International Journal of Electrical and Computer Engineering (IJECE); Vol 8 No 6 (2018); 4148</dc:source><dc:source>2088-8708</dc:source><dc:source>2088-8708</dc:source><dc:relation>http://ijece.iaescore.com/index.php/IJECE/article/viewFile/11171/12319</dc:relation><dc:rights>http://creativecommons.org/licenses/by-nc/4.0</dc:rights></oai_dc:dc>