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New active diode with bulk regulation transistors and its application to integrated voltage rectifier circuit

International Journal of Electrical and Computer Engineering (IJECE) · Vol. 9 No. 2 (2019)

DOI
10.11591/ijece.v9i2.pp902-908
ISSN
2088-8708, 2088-8708
Published
2019-04-01
Publisher
Institute of Advanced Engineering and Science
License
creativecommons.org/licenses/by-nc/4.0

Abstract

This paper describes new active diode with bulk regulation transistors and its application to the integrated voltage rectifier circuit for a biological signal measurement system with smartphone. The conventional active diode with BRT has the dead region which causes leak current, and the output voltages of the application (e.g. voltage rectifier circuit) decrease. In order to overcome these problem, we propose new active diode with BRT which uses the control signal from the comparator of active diode to eliminate the dead region. Next we apply the proposed active diode with BRT to the integrated voltage rectifier circuit. The proposed active diode with BRT and voltage rectifier circuit were fabricated using 0.6 m standard CMOS process. From experimental results, the proposed active diode with BRT eliminates the dead region perfectly, and the proposed voltage rectifier circuit generates + 2.86 V (positive side) and - 2.70 V (negative side) under the condition that the amplitude and frequency of the input sinusoidal signal are 1.5 V and 10 kHz, respectively, and the load resistance is 10 k.

Collaboration network of the authors

9 authors · 18 co-authorship links · 4 across different organisations

Hover or tap a name to highlight its co-authors. Double-click to open the author's page.

  • University of Miyazaki
  • University of Brawijaya
  • Affiliation unknown
  • Different organisations
  • Same organisation
  • Affiliation unknown
  • Thicker line = more joint articles · bigger circle = more articles
Show as table
Co-authorOrganisationJoint articles
Zainul AbidinUniversity of Miyazaki7
Shota MagoUniversity of Miyazaki6
Agung SetiabudiAffiliation unknown4
Kenya KondoUniversity of Miyazaki2
Adharul MuttaqinUniversity of Brawijaya1
Nauval AryawiratamaUniversity of Brawijaya1

Affiliations come from OpenAlex; journal OAI-PMH metadata carries none. Authors without an OpenAlex ID are matched by name, which can merge or split people.

This record comes from Crossref (what the publisher deposited), because the journal's own OAI-PMH endpoint could not be harvested.

Metadata source: Crossref API (cadangan, berdasarkan ISSN) https://api.crossref.org/journals/2088-8708/works, first harvested 27 Okt 2026, last seen 27 Okt 2026.
Metadata as oai_dc, converted from Crossref
<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/"><dc:title>New active diode with bulk regulation transistors and its application to integrated voltage rectifier circuit</dc:title><dc:creator>Miyauchi, Ryoichi</dc:creator><dc:creator>Tanno, Koichi</dc:creator><dc:creator>Tamura, Hiroki</dc:creator><dc:description>&lt;jats:p&gt;This paper describes new active diode with bulk regulation transistors and its application to the integrated voltage rectifier circuit for a biological signal measurement system with smartphone. The conventional active diode with BRT has the dead region which causes leak current, and the output voltages of the application (e.g. voltage rectifier circuit) decrease. In order to overcome these problem, we propose new active diode with BRT which uses the control signal from the comparator of active diode to eliminate the dead region. Next we apply the proposed active diode with BRT to the integrated voltage rectifier circuit. The proposed active diode with BRT and voltage rectifier circuit were fabricated using 0.6 m standard CMOS process. From experimental results, the proposed active diode with BRT eliminates the dead region perfectly, and the proposed voltage rectifier circuit generates + 2.86 V (positive side) and - 2.70 V (negative side) under the condition that the amplitude and frequency of the input sinusoidal signal are 1.5 V and 10 kHz, respectively, and the load resistance is 10 k.&lt;/jats:p&gt;</dc:description><dc:publisher>Institute of Advanced Engineering and Science</dc:publisher><dc:date>2019-04-01</dc:date><dc:type>info:eu-repo/semantics/article</dc:type><dc:format>application/pdf</dc:format><dc:identifier>https://doi.org/10.11591/ijece.v9i2.pp902-908</dc:identifier><dc:identifier>10.11591/ijece.v9i2.pp902-908</dc:identifier><dc:source>International Journal of Electrical and Computer Engineering (IJECE); Vol 9 No 2 (2019); 902</dc:source><dc:source>2088-8708</dc:source><dc:source>2088-8708</dc:source><dc:relation>http://ijece.iaescore.com/index.php/IJECE/article/viewFile/12888/11591</dc:relation><dc:rights>http://creativecommons.org/licenses/by-nc/4.0</dc:rights></oai_dc:dc>