Open access Jurnal SINTA 1
How does technological parameters impact the static current gain of InP-based Single Heterojunction Bipolar Transistor?
International Journal of Electrical and Computer Engineering (IJECE) · Vol. 9 No. 5 (2019)
- ISSN
- 2722-2578, 2088-8708
- Published
- 2019-10-01
- Publisher
- Institute of Advanced Engineering and Science
Abstract
In telecommunication systems, Heterojunction Bipolar Transistors (HBTs) are used extensively due to their good electrical characteristics. The work presented in this paper aims to enhance the electrical performance of the InP / InGaAs Single Heterojunction Bipolar Transistor (SHBT) in terms of the static current gain β. Silvaco’s TCAD tools were used for the simulation of the output characteristics of the studied electronic device. Initially, we used the interactive tool Deckbuild to define the simulation program and the device editor DevEdit to design the device structure, and we also used the simulator Atlas which allows the prediction of the electrical characteristics of most semiconductor devices. Because of several phenomena occuring within the electronic device SHBT, we added some physical models included in the simulator such as SRH, BBT.STD. Afterwards, we investigated the influence of doping concentrations of the base and the collector N b and N c on the electrical performance of the InP/InGaAs SHBT, and particularly in terms of the static current gain β. Finally, based on optimal values of the selected parameters, we have defined an optimized device that has a highest current gain β.
Collaboration network of the authors
25 authors · 59 co-authorship links · 7 across different organisations
Hover or tap a name to highlight its co-authors. Double-click to open the author's page.
- University of Hassan II Casablanca
- Abdelmalek Essaâdi University
- Université Hassan 1er
- Affiliation unknown
- Different organisations
- Same organisation
- Affiliation unknown
- Thicker line = more joint articles · bigger circle = more articles
Show as table
| Co-author | Organisation | Joint articles |
|---|---|---|
| Ikram Daanoune | University of Hassan II Casablanca | 5 |
| Sara El Mattar | University of Hassan II Casablanca | 4 |
| Ilham El Mourabit | University of Hassan II Casablanca | 4 |
| Hamid Bouyghf | University of Hassan II Casablanca | 3 |
| Souad Akkader | University of Hassan II Casablanca | 3 |
| Abir Zaidi | University of Hassan II Casablanca | 3 |
| Btissam Boustani | University of Hassan II Casablanca | 3 |
| Imane Assini | University of Hassan II Casablanca | 3 |
| Salmi Hassan | University of Hassan II Casablanca | 2 |
| Mourad Zegrari | University of Hassan II Casablanca | 2 |
| Baghdad Abdenaceur | Affiliation unknown | 2 |
| Abdelhadi Eloudrhiri Hassani | University of Hassan II Casablanca | 2 |
| Hicham Qabouche | University of Hassan II Casablanca | 2 |
| Ilyas Khelafa | University of Hassan II Casablanca | 1 |
| Abdenaceur Baghdad | Affiliation unknown | 1 |
| Yassine Gmih | Université Hassan 1er | 1 |
| Aziz Dkiouak | Abdelmalek Essaâdi University | 1 |
| Nourdine Herbaz | University of Hassan II Casablanca | 1 |
| Hassan El Idrissi | University of Hassan II Casablanca | 1 |
| Hamza Sabir | University of Hassan II Casablanca | 1 |
Affiliations come from OpenAlex; journal OAI-PMH metadata carries none. Authors without an OpenAlex ID are matched by name, which can merge or split people.