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A 5G mm-wave compact voltage-controlled oscillator in 0.25 µm pHEMT technology

International Journal of Electrical and Computer Engineering (IJECE) · Vol. 11 No. 2 (2021)

DOI
10.11591/ijece.v11i2.pp1036-1042
ISSN
2722-2578, 2088-8708
Published
2021-04-01
Publisher
Institute of Advanced Engineering and Science
License
creativecommons.org/licenses/by-sa/4.0

Abstract

A 5G mm-wave monolithic microwave integrated circuit (MMIC) voltage-controlled oscillator (VCO) is presented in this paper. It is designed on GaAs substrate and with 0.25 µm-pHEMT technology from UMS foundry and it is based on pHEMT varactors in order to achieve a very small chip size. A 0dBm-output power over the entire tuning range from 27.67 GHz to 28.91 GHz, a phase noise of -96.274 dBc/Hz and -116.24 dBc/Hz at 1 and 10 MHz offset frequency from the carrier respectively are obtained on simulation. A power consumption of 111 mW is obtained for a chip size of 0.268 mm2. According to our knowledge, this circuit occupies the smallest surface area compared to pHEMTs oscillators published in the literature.

Collaboration network of the authors

19 authors · 67 co-authorship links · 31 across different organisations

Hover or tap a name to highlight its co-authors. Double-click to open the author's page.

  • Sidi Mohamed Ben Abdellah University
  • Université Moulay Ismail de Meknes
  • Institut National des Postes et Télécommunications
  • Lebanese University
  • Laboratoire d'électronique, systèmes de communication et microsystèmes
  • Université Privée de Fès
  • Affiliation unknown
  • Different organisations
  • Same organisation
  • Affiliation unknown
  • Thicker line = more joint articles · bigger circle = more articles
Show as table
Co-authorOrganisationJoint articles
Younes BalboulSidi Mohamed Ben Abdellah University13
Salah-Eddine DidiSidi Mohamed Ben Abdellah University4
Imane HalkhamsUniversité Privée de Fès4
Asmae MamaneAffiliation unknown3
Mohammed El GhaziUniversité Moulay Ismail de Meknes3
Dounia DaghoujSidi Mohamed Ben Abdellah University3
Marwa AbdellaouiSidi Mohamed Ben Abdellah University3
Youness BalboulAffiliation unknown3
Saad-Eddine ChafiSidi Mohamed Ben Abdellah University3
Ismail AngriInstitut National des Postes et Télécommunications1
Mohammed MahfoudiAffiliation unknown1
Abdellah NajidInstitut National des Postes et Télécommunications1

Affiliations come from OpenAlex; journal OAI-PMH metadata carries none. Authors without an OpenAlex ID are matched by name, which can merge or split people.

This record comes from Crossref (what the publisher deposited), because the journal's own OAI-PMH endpoint could not be harvested.

Metadata source: Crossref API (cadangan, berdasarkan ISSN) https://api.crossref.org/journals/2088-8708/works, first harvested 27 Okt 2026, last seen 27 Okt 2026.
Metadata as oai_dc, converted from Crossref
<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/"><dc:title>A 5G mm-wave compact voltage-controlled oscillator in 0.25 µm pHEMT technology</dc:title><dc:creator>Es-saqy, Abdelhafid</dc:creator><dc:creator>Abata, Maryam</dc:creator><dc:creator>Mehdi, Mahmoud</dc:creator><dc:creator>Fattah, Mohammed</dc:creator><dc:creator>Mazer, Said</dc:creator><dc:creator>El Bekkali, Moulhime</dc:creator><dc:creator>Algani, Catherine</dc:creator><dc:description>&lt;jats:p&gt;A 5G mm-wave monolithic microwave integrated circuit (MMIC) voltage-controlled oscillator (VCO) is presented in this paper. It is designed on GaAs substrate and with 0.25 µm-pHEMT technology from UMS foundry and it is based on pHEMT varactors in order to achieve a very small chip size. A 0dBm-output power over the entire tuning range from 27.67 GHz to 28.91 GHz, a phase noise of -96.274 dBc/Hz and -116.24 dBc/Hz at 1 and 10 MHz offset frequency from the carrier respectively are obtained on simulation. A power consumption of 111 mW is obtained for a chip size of 0.268 mm2. According to our knowledge, this circuit occupies the smallest surface area compared to pHEMTs oscillators published in the literature.&lt;/jats:p&gt;</dc:description><dc:publisher>Institute of Advanced Engineering and Science</dc:publisher><dc:date>2021-04-01</dc:date><dc:type>info:eu-repo/semantics/article</dc:type><dc:format>application/pdf</dc:format><dc:identifier>https://doi.org/10.11591/ijece.v11i2.pp1036-1042</dc:identifier><dc:identifier>10.11591/ijece.v11i2.pp1036-1042</dc:identifier><dc:source>International Journal of Electrical and Computer Engineering (IJECE); Vol 11 No 2 (2021); 1036</dc:source><dc:source>2722-2578</dc:source><dc:source>2088-8708</dc:source><dc:relation>http://ijece.iaescore.com/index.php/IJECE/article/viewFile/22777/14627</dc:relation><dc:rights>http://creativecommons.org/licenses/by-sa/4.0</dc:rights></oai_dc:dc>