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PENGARUH PEMBELAJARAN KOOPERATIF TIPE GROUP INVESTIGATION BERBASIS EKSPERIMEN INKUIRI TERHADAP MOTIVASI BELAJAR SISWA

Unnes Physics Education Journal · Vol. 2 No. 2 (2013)

DOI
10.15294/upej.v2i2.2663
ISSN
2503-2313, 2252-6935
Terbit
2013-12-07
Penerbit
UPEJ Unnes Physics Education Journal
Bahasa
eng

Abstrak

Zinc Oxide doped Gallium Oxide (Ga2O3:Zn) thin films have been successfully deposited at corning glass and silicon (1 1 1) substrat with a plasma power 20.16 W with substrat temperature 600°C dan 635°C using dc magnetron sputtering method. The crystal structure of films were characterized using XRD (X-ray diffraction). Morphology films ware characterized using SEM (Scanning Electron Microscopic). Optical transmittance characterized by UV-vis spectrometer. Ga2O3:Zn thin films on a substrat temperature of 600°C dan 635°C have a polycrystalline structure. Have obtained Ga2O3 peak (0 1 2) and (2 1 10) and peak silicon (1 1 1) and (4 4 4). The orientation (0 1 2) has the highest intensity and the value of full width half maximum (FWHM) at the smallest substrat temperature 600°C. Transmittance value the smaller the increase in substrate temperature with the largest value of 70% is owned by the substrate temperature of 600 ° C and 60% for a temperature of 635 ° C, with the magnitude of the resulting energy gap is relatively the same, namely 4.60 eV and 4.65 eV.

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24 penulis · 44 tautan kepenulisan bersama · 4 lintas organisasi

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  • State University of Semarang
  • University of Sarjanawiyata Tamansiswa
  • Sebelas Maret University
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Rekan penulisOrganisasiArtikel bersama
Sarwi SarwiState University of Semarang1
Martina WulandariState University of Semarang1
Listiyanto ListiyantoState University of Semarang1
Mahardika Prasetya AjiState University of Semarang1
Shofina Mumtaz MahardhikaState University of Semarang1
Langlang HandayaniState University of Semarang1
Nyimas Larasati UtamiState University of Semarang1
. HartonoState University of Semarang1
Ihdina I.MState University of Semarang1
Achmad SopyanState University of Semarang1
Eko Sulkhany YuliantoUniversity of Sarjanawiyata Tamansiswa1
Bambang SubaliState University of Semarang1
Alvian AlvianState University of Semarang1
Arif WidiyatmokoState University of Semarang1
Suparmi SuparmiSebelas Maret University1
Maghfirotul FitriyahState University of Semarang1
Ngurah Made D. PState University of Semarang1
S. SulhadiState University of Semarang1
Fatwa Aji KurniawanState University of Semarang1
T. P. P. VisserAfiliasi tidak diketahui1
S. A. van GilsAfiliasi tidak diketahui1

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Sumber metadata: OAI-PMH (metadata jurnal) https://journal.unnes.ac.id/sju/index.php/upej/oai, pertama di-harvest 6 Nov 2026, terakhir terlihat 6 Nov 2026.
Metadata asli (oai_dc) 
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	<dc:title xml:lang="en-US">PENGARUH PEMBELAJARAN KOOPERATIF TIPE GROUP INVESTIGATION BERBASIS EKSPERIMEN INKUIRI TERHADAP MOTIVASI BELAJAR SISWA</dc:title>
	<dc:creator>Widowati, S.</dc:creator>
	<dc:creator>Susanto, H.</dc:creator>
	<dc:creator>Yulianto, A.</dc:creator>
	<dc:description xml:lang="en-US">Zinc Oxide doped Gallium Oxide (Ga2O3:Zn) thin films have been successfully deposited at corning glass and silicon (1 1 1) substrat with a plasma power 20.16 W with substrat temperature 600°C dan 635°C using dc magnetron sputtering method. The crystal structure of films were characterized using XRD (X-ray diffraction). Morphology films ware characterized using SEM (Scanning Electron Microscopic). Optical transmittance characterized by UV-vis spectrometer. Ga2O3:Zn thin films on a substrat temperature of 600°C dan 635°C have a polycrystalline structure. Have obtained Ga2O3 peak (0 1 2) and (2 1 10) and peak silicon (1 1 1) and (4 4 4). The orientation (0 1 2) has the highest intensity and the value of full width half maximum (FWHM) at the smallest substrat temperature 600°C. Transmittance value the smaller the increase in substrate temperature with the largest value of 70% is owned by the substrate temperature of 600 ° C and 60% for a temperature of 635 ° C, with the magnitude of the resulting energy gap is relatively the same, namely 4.60 eV and 4.65 eV.</dc:description>
	<dc:publisher xml:lang="en-US">UPEJ Unnes Physics Education Journal</dc:publisher>
	<dc:date>2013-12-07</dc:date>
	<dc:type>info:eu-repo/semantics/article</dc:type>
	<dc:type>info:eu-repo/semantics/publishedVersion</dc:type>
	<dc:type xml:lang="en-US">Peer-reviewed Article</dc:type>
	<dc:format>application/pdf</dc:format>
	<dc:identifier>https://journal.unnes.ac.id/sju/upej/article/view/2663</dc:identifier>
	<dc:identifier>10.15294/upej.v2i2.2663</dc:identifier>
	<dc:source xml:lang="en-US">UPEJ Unnes Physics Education Journal; Vol 2 No 2 (2013)</dc:source>
	<dc:source>2503-2313</dc:source>
	<dc:source>2252-6935</dc:source>
	<dc:language>eng</dc:language>
	<dc:relation>https://journal.unnes.ac.id/sju/upej/article/view/2663/2452</dc:relation>
</oai_dc:dc>