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Adiabatic technique based low power synchronous counter design

International Journal of Electrical and Computer Engineering (IJECE) · Vol. 13 No. 4 (2023)

DOI
10.11591/ijece.v13i4.pp3770-3777
ISSN
2722-2578, 2088-8708
Published
2023-08-01
Publisher
Institute of Advanced Engineering and Science
License
creativecommons.org/licenses/by-sa/4.0

Abstract

The performance of integrated circuits is evaluated by their design architecture, which ensures high reliability and optimizes energy. The majority of the system-level architectures consist of sequential circuits. Counters are fundamental blocks in numerous very large-scale integration (VLSI) applications. The T-flip-flop is an important block in synchronous counters, and its high-power consumption impacts the overall effectiveness of the system. This paper calculates the power dissipation (PD), power delay product (PDP), and latency of the presented T flip-flop. To create a 2-bit synchronous counter based on the novel T flip-flops, a performance matrix such as PD, latency, and PDP is analyzed. The analysis is carried out at 100 and 10 MHz frequencies with varying temperatures and operating voltages. It is observed that the presented counter design has a lesser power requirement and PDP compared to the existing counter architectures. The proposed T-flip-flop design at the 45 nm technology node shows an improvement of 30%, 76%, and 85% in latency, PD, and PDP respectively to the 180 nm node at 10 MHz frequency. Similarly, the proposed counter at the 45 nm technology node shows 96% and 97% improvement in power dissipation, delay, and PDP respectively compared to the 180 nm at 10 MHz frequency.

Collaboration network of the authors

3 authors · 3 co-authorship links · 2 across different organisations

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  • SRM Institute of Science and Technology
  • Iraqi University
  • Different organisations
  • Same organisation
  • Affiliation unknown
  • Thicker line = more joint articles · bigger circle = more articles
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Co-authorOrganisationJoint articles

Affiliations come from OpenAlex; journal OAI-PMH metadata carries none. Authors without an OpenAlex ID are matched by name, which can merge or split people.

This record comes from Crossref (what the publisher deposited), because the journal's own OAI-PMH endpoint could not be harvested.

Metadata source: Crossref API (cadangan, berdasarkan ISSN) https://api.crossref.org/journals/2088-8708/works, first harvested 27 Okt 2026, last seen 27 Okt 2026.
Metadata as oai_dc, converted from Crossref
<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/"><dc:title>Adiabatic technique based low power synchronous counter design</dc:title><dc:creator>Sanadhya, Minakshi</dc:creator><dc:creator>Sharma, Devendra Kumar</dc:creator><dc:creator>Hameed Chyad, Alfilh Raed</dc:creator><dc:description>&lt;jats:p&gt;&amp;lt;p&amp;gt;The performance of integrated circuits is evaluated by their design architecture, which ensures high reliability and optimizes energy. The majority of the system-level architectures consist of sequential circuits. Counters are fundamental blocks in numerous very large-scale integration (VLSI) applications. The T-flip-flop is an important block in synchronous counters, and its high-power consumption impacts the overall effectiveness of the system. This paper calculates the power dissipation (PD), power delay product (PDP), and latency of the presented T flip-flop. To create a 2-bit synchronous counter based on the novel T flip-flops, a performance matrix such as PD, latency, and PDP is analyzed. The analysis is carried out at 100 and 10 MHz frequencies with varying temperatures and operating voltages. It is observed that the presented counter design has a lesser power requirement and PDP compared to the existing counter architectures. The proposed T-flip-flop design at the 45 nm technology node shows an improvement of 30%, 76%, and 85% in latency, PD, and PDP respectively to the 180 nm node at 10 MHz frequency. Similarly, the proposed counter at the 45 nm technology node shows 96% and 97% improvement in power dissipation, delay, and PDP respectively compared to the 180 nm at 10 MHz frequency.&amp;lt;/p&amp;gt;&lt;/jats:p&gt;</dc:description><dc:publisher>Institute of Advanced Engineering and Science</dc:publisher><dc:date>2023-08-01</dc:date><dc:type>info:eu-repo/semantics/article</dc:type><dc:format>application/pdf</dc:format><dc:identifier>https://doi.org/10.11591/ijece.v13i4.pp3770-3777</dc:identifier><dc:identifier>10.11591/ijece.v13i4.pp3770-3777</dc:identifier><dc:source>International Journal of Electrical and Computer Engineering (IJECE); Vol 13 No 4 (2023); 3770</dc:source><dc:source>2722-2578</dc:source><dc:source>2088-8708</dc:source><dc:relation>https://ijece.iaescore.com/index.php/IJECE/article/viewFile/29036/16768</dc:relation><dc:rights>http://creativecommons.org/licenses/by-sa/4.0</dc:rights></oai_dc:dc>