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High rejection self-oscillating up-conversion mixer for fifth-generation communications

International Journal of Electrical and Computer Engineering (IJECE) · Vol. 13 No. 5 (2023)

DOI
10.11591/ijece.v13i5.pp4979-4986
ISSN
2722-2578, 2088-8708
Published
2023-10-01
Publisher
Institute of Advanced Engineering and Science
License
creativecommons.org/licenses/by-sa/4.0

Abstract

This paper presents the design of a pseudomorphic high electron mobility transistor (pHEMT) self-oscillating mixer (SOM) for millimeter wave wireless communication systems. The 180° out-of-phase technique is chosen to both improve the desired lower sideband (LSB) signal and to achieve a satisfactory rejection of the unwanted signals (LO, USB and IF). This SOM is designed on the PH15 process of UMS foundry which is based on 0.15 µm GaAs pHEMT. The signal is up-converted from 2 GHz-IF frequency to 26 GHz-LSB frequency, using an autogenerated 28 GHz-LO signal. Simulations were performed using the advanced design system (ADS) workflow. They show 6.4 dB conversion gain and a signal rejection rate of 29.7 dB for the unwanted USB signal. the chip size is 3.6 mm 2.

Collaboration network of the authors

19 authors · 67 co-authorship links · 31 across different organisations

Hover or tap a name to highlight its co-authors. Double-click to open the author's page.

  • Sidi Mohamed Ben Abdellah University
  • Université Moulay Ismail de Meknes
  • Institut National des Postes et Télécommunications
  • Lebanese University
  • Laboratoire d'électronique, systèmes de communication et microsystèmes
  • Université Privée de Fès
  • Affiliation unknown
  • Different organisations
  • Same organisation
  • Affiliation unknown
  • Thicker line = more joint articles · bigger circle = more articles
Show as table
Co-authorOrganisationJoint articles
Younes BalboulSidi Mohamed Ben Abdellah University13
Salah-Eddine DidiSidi Mohamed Ben Abdellah University4
Imane HalkhamsUniversité Privée de Fès4
Asmae MamaneAffiliation unknown3
Mohammed El GhaziUniversité Moulay Ismail de Meknes3
Dounia DaghoujSidi Mohamed Ben Abdellah University3
Marwa AbdellaouiSidi Mohamed Ben Abdellah University3
Youness BalboulAffiliation unknown3
Saad-Eddine ChafiSidi Mohamed Ben Abdellah University3
Ismail AngriInstitut National des Postes et Télécommunications1
Mohammed MahfoudiAffiliation unknown1
Abdellah NajidInstitut National des Postes et Télécommunications1

Affiliations come from OpenAlex; journal OAI-PMH metadata carries none. Authors without an OpenAlex ID are matched by name, which can merge or split people.

This record comes from Crossref (what the publisher deposited), because the journal's own OAI-PMH endpoint could not be harvested.

Metadata source: Crossref API (cadangan, berdasarkan ISSN) https://api.crossref.org/journals/2088-8708/works, first harvested 27 Okt 2026, last seen 27 Okt 2026.
Metadata as oai_dc, converted from Crossref
<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/"><dc:title>High rejection self-oscillating up-conversion mixer for  fifth-generation communications</dc:title><dc:creator>Es-saqy, Abdelhafid</dc:creator><dc:creator>Abata, Maryam</dc:creator><dc:creator>Fattah, Mohammed</dc:creator><dc:creator>Mazer, Said</dc:creator><dc:creator>Mehdi, Mahmoud</dc:creator><dc:creator>El Bekkali, Moulhime</dc:creator><dc:creator>Algani, Catherine</dc:creator><dc:description>&lt;jats:p&gt;&amp;lt;span lang="EN-US"&amp;gt;This paper presents the design of a pseudomorphic high electron mobility transistor (pHEMT) self-oscillating mixer (SOM) for millimeter wave wireless communication systems. The 180° out-of-phase technique is chosen to both improve the desired lower sideband (LSB) signal and to achieve a satisfactory rejection of the unwanted signals (LO, USB and IF). This SOM is designed on the PH15 process of UMS foundry which is based on 0.15 µm GaAs pHEMT. The signal is up-converted from 2 GHz-IF frequency to 26 GHz-LSB frequency, using an autogenerated 28 GHz-LO signal. Simulations were performed using the advanced design system (ADS) workflow. They show 6.4 dB conversion gain and a signal rejection rate of 29.7 dB for the unwanted USB signal. the chip size is 3.6 mm&amp;lt;sup&amp;gt;2&amp;lt;/sup&amp;gt;.&amp;lt;/span&amp;gt;&lt;/jats:p&gt;</dc:description><dc:publisher>Institute of Advanced Engineering and Science</dc:publisher><dc:date>2023-10-01</dc:date><dc:type>info:eu-repo/semantics/article</dc:type><dc:format>application/pdf</dc:format><dc:identifier>https://doi.org/10.11591/ijece.v13i5.pp4979-4986</dc:identifier><dc:identifier>10.11591/ijece.v13i5.pp4979-4986</dc:identifier><dc:source>International Journal of Electrical and Computer Engineering (IJECE); Vol 13 No 5 (2023); 4979</dc:source><dc:source>2722-2578</dc:source><dc:source>2088-8708</dc:source><dc:relation>https://ijece.iaescore.com/index.php/IJECE/article/viewFile/30375/16799</dc:relation><dc:rights>http://creativecommons.org/licenses/by-sa/4.0</dc:rights></oai_dc:dc>