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PENGARUH DOPING AL TERHADAP BAND GAP ENERGY LAPISAN TIPIS ZNO

JOURNAL ONLINE OF PHYSICS · Vol. 4 No. 1 (2019) · hlm. 24–29

DOI
10.22437/jop.v4i1.5146
ISSN
2502-2016
Terbit
2019-07-17
Penerbit
Prodi Fisika FST UNJA
Bahasa
en

Abstrak

[Title: The Effect of dopping Al on the Value of Band Gap Energy Thin Film of ZnO] A research has been conducted on the effect of doping Al on the value of band gap energy thin film ZnO with variation of concentration Al 0%, 4%, 6%, 8% and 10%. A thin film ZnO/Al is grown on a glass substrate using a spin coating technique. The resulting thin film was characterized using a UV-Vis measure the ZnO/Al transmittance value in the wavelength range 200-700 nm. Then calculate the value of band gap energy using the Swanepoel and touc Plot and obtained value band gap energy at concentration 0%, 4%, 6%, 8% and 10% successive is 3,94 eV, 3,25 eV, 3,24 eV, 3,22 eV dan 3,84 eV. Of the results obtained, the smallest band gap energy value at ZnO/Al 8% concentration of 3,22 eV. Keyword: Thin Film, Dopping, Band Gap Energy

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  • Universitas Jambi
  • Universitas Gadjah Mada
  • Indonesia Defense University
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Rekan penulisOrganisasiArtikel bersama
Mardian PeslinofAfiliasi tidak diketahui6
Restina BemisUniversitas Jambi2
NurhidayahAfiliasi tidak diketahui2
NazarudinAfiliasi tidak diketahui2
Frastica DeswardaniUniversitas Jambi2
Muhammad Ficky AfriantoUniversitas Jambi2
Basuki RahmatIndonesia Defense University2
Devi IndrianiUniversitas Jambi2
Julianti LestariUniversitas Jambi2
Tri SiswantoUniversitas Jambi1
Aditya Denny PrabawaUniversitas Jambi1
Indra Lasmana TariganUniversitas Jambi1
Edwin PermanaUniversitas Jambi1
Nelson NelsonUniversitas Jambi1
Hamdan Maruli SiregarUniversitas Jambi1
Muhaimin MuhaiminUniversitas Jambi1
Herijon Muhammad SyahrilUniversitas Jambi1
Ratih Dyah PuspitasariUniversitas Jambi1
NelsonAfiliasi tidak diketahui1
NelsonUniversitas Jambi1
Ira Kusuma DewiUniversitas Jambi1
Vidya Kusuma Wardani SUniversitas Jambi1
Sri Juari SantosaUniversitas Gadjah Mada1
Bambang RusdiarsoUniversitas Gadjah Mada1
Heriyanti HeriyantiUniversitas Jambi1
Rahmi RahmiUniversitas Jambi1
Nashih UlwanUniversitas Jambi1

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Sumber metadata: OAI-PMH (metadata jurnal) https://online-journal.unja.ac.id/index.php/jop/oai, pertama di-harvest 6 Nov 2026, terakhir terlihat 8 Nov 2026.
Metadata asli (oai_dc) 
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	<dc:title xml:lang="en">PENGARUH DOPING AL TERHADAP BAND GAP ENERGY LAPISAN TIPIS ZNO</dc:title>
	<dc:creator xml:lang="en">Listiorini, Listiorini</dc:creator>
	<dc:creator xml:lang="en">Fahyuan, Helga Dwi</dc:creator>
	<dc:creator xml:lang="en">Ngatijo, Ngatijo</dc:creator>
	<dc:description xml:lang="en">[Title: The Effect of dopping Al on the Value of Band Gap Energy Thin Film of ZnO] A research has been conducted on the effect of doping Al on the value of band gap energy thin film ZnO with variation of concentration Al 0%, 4%, 6%, 8% and 10%. A thin film ZnO/Al is grown on a glass substrate using a spin coating technique. The resulting thin film was characterized using a UV-Vis measure the ZnO/Al transmittance value in the wavelength range 200-700 nm. Then calculate the value of band gap energy using the Swanepoel and touc Plot and obtained value band gap energy at concentration 0%, 4%, 6%, 8% and 10%&amp;nbsp; successive is 3,94 eV, 3,25 eV, 3,24 eV, 3,22 eV dan 3,84 eV. Of the results obtained, the smallest band gap energy value at ZnO/Al 8% concentration of 3,22 eV.
Keyword: Thin Film, Dopping, Band Gap Energy</dc:description>
	<dc:publisher xml:lang="en">Prodi Fisika FST UNJA</dc:publisher>
	<dc:date>2019-07-17</dc:date>
	<dc:type>info:eu-repo/semantics/article</dc:type>
	<dc:type>info:eu-repo/semantics/publishedVersion</dc:type>
	<dc:format>application/pdf</dc:format>
	<dc:identifier>https://online-journal.unja.ac.id/jop/article/view/5146</dc:identifier>
	<dc:identifier>10.22437/jop.v4i1.5146</dc:identifier>
	<dc:source xml:lang="en">JOURNAL ONLINE OF PHYSICS; Vol. 4 No. 1 (2018): JOP (Journal Online of Physics) Vol 4 No 1; 24-29</dc:source>
	<dc:source>2502-2016</dc:source>
	<dc:language>en</dc:language>
	<dc:relation>https://online-journal.unja.ac.id/jop/article/view/5146/8961</dc:relation>
	<dc:rights xml:lang="en">Copyright (c) 2019 JOURNAL ONLINE OF PHYSICS</dc:rights>
</oai_dc:dc>