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Influence of Substrate Temperature on Structural, Electrical and Optical Properties of ZnO:Al Thin Films

Atom Indonesia · Vol. 35 No. 2 (2011) · pp. 115–125

DOI
10.17146/aij.2009.50
ISSN
2356-5322, 0126-1568
Published
2011-12-12
Publisher
National Research and Innovation Agency
Language
eng
License
creativecommons.org/licenses/by-nc-sa/4.0

Abstract

Transparent and conductive aluminium-doped zinc oxide thin films have been prepared by dc magnetron sputtering technique using targets composed of ZnO and aluminium. Polycrystalline ZnO:Al films were deposited onto a heated glass substrate. Surface morphology and crystalline structure as well as optical and electrical properties of the deposited films were found to depend directly on substrate temperature. From optical and electrical analysis it was observed that optical transmittance and conductivity of the ZnO:Al transparent conductive oxide films increased when the deposition temperature was raised from 200 to 400 oC. Films grown on substrates heated at 300 oC showed a high conductivity value of 0.2 x 102 Ω-1cm-1 and a visible transmission of about 80%. The growth of ZnO:Al thin films on the surface of glass substrate at temperatures of 300 oC and aluminium doping levels of 0.9 at.% were the best to attain ZnO:Al films with optical and structural qualities as required for solar cell applications, as a window material in antireflection coatings or optical filters.Received: 17 March 2009; Revised: 22 November 2009; Accepted: 23 November 2009

Keywords

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12 authors · 17 co-authorship links

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Co-authorOrganisationJoint articles
Budi WaluyaAffiliation unknown3
Wardono WardonoAffiliation unknown1
Eka LestariAffiliation unknown1
Oki Anggit SatriaAffiliation unknown1
Andri Jaya KumalaAffiliation unknown1
S B WaluyoAffiliation unknown1
Waluyo WaluyoAffiliation unknown1
Astriana AstrianaAffiliation unknown1
T. SujitnoAffiliation unknown1

Affiliations come from OpenAlex; journal OAI-PMH metadata carries none. Authors without an OpenAlex ID are matched by name, which can merge or split people.

Metadata source: OAI-PMH (metadata jurnal) https://atomindonesia.brin.go.id/index.php/aij/oai, first harvested 8 Nov 2026, last seen 8 Nov 2026.
Original metadata (oai_dc) 
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	<dc:title xml:lang="en-US">Influence of Substrate Temperature on Structural, Electrical and Optical Properties of ZnO:Al Thin Films</dc:title>
	<dc:creator>Sudjatmoko, Sudjatmoko</dc:creator>
	<dc:creator>Wirjoadi, Wirjoadi</dc:creator>
	<dc:creator>Siswanto, B.</dc:creator>
	<dc:subject xml:lang="en-US">polycrystalline, morphology, conductivity, transmittance.</dc:subject>
	<dc:description xml:lang="en-US">Transparent and conductive aluminium-doped zinc oxide thin films have been prepared by dc magnetron sputtering technique using targets composed of ZnO and aluminium. Polycrystalline ZnO:Al films were deposited onto a heated glass substrate. Surface morphology and crystalline structure as well as optical and electrical properties of the deposited films were found to depend directly on substrate temperature. From optical and electrical analysis it was observed that optical transmittance and conductivity of the ZnO:Al transparent conductive oxide films increased when the deposition temperature was raised from 200 to 400 oC. Films grown on substrates heated at 300 oC showed a high conductivity value of 0.2 x 102 Ω-1cm-1 and a visible transmission of about 80%. The growth of ZnO:Al thin films on the surface of glass substrate at temperatures of 300 oC and aluminium doping levels of 0.9 at.% were the best to attain ZnO:Al films with optical and structural qualities as required for solar cell applications, as a window material in antireflection coatings or optical filters.Received: 17 March 2009; Revised: 22 November 2009 ; Accepted: 23 November 2009</dc:description>
	<dc:publisher xml:lang="en-US">National Research and Innovation Agency</dc:publisher>
	<dc:contributor xml:lang="en-US">National Nuclear Energy Agency of Indonesia</dc:contributor>
	<dc:date>2011-12-12</dc:date>
	<dc:type>info:eu-repo/semantics/article</dc:type>
	<dc:type>info:eu-repo/semantics/publishedVersion</dc:type>
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	<dc:format>application/pdf</dc:format>
	<dc:identifier>https://atomindonesia.brin.go.id/index.php/aij/article/view/50</dc:identifier>
	<dc:identifier>10.17146/aij.2009.50</dc:identifier>
	<dc:source xml:lang="en-US">Atom Indonesia; Vol 35, No 2 (2009): July 2009; 115-125</dc:source>
	<dc:source>2356-5322</dc:source>
	<dc:source>0126-1568</dc:source>
	<dc:source>10.17146/aij.2009.%x</dc:source>
	<dc:language>eng</dc:language>
	<dc:relation>https://atomindonesia.brin.go.id/index.php/aij/article/view/50/37</dc:relation>
	<dc:rights xml:lang="en-US">Copyright (c) 2016 Atom Indonesia</dc:rights>
	<dc:rights xml:lang="en-US">http://creativecommons.org/licenses/by-nc-sa/4.0</dc:rights>
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