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Adaptive electromagnetic interference mitigation for wide-bandgap power converters: a review

International Journal of Power Electronics and Drive Systems · Vol. 17 No. 3 (2026) · pp. 1941–1949

DOI
10.11591/ijpeds.v17.i3.pp1941-1949
ISSN
2722-256X, 2088-8694
Published
2026-09-01
Publisher
Institute of Advanced Engineering and Science
Language
eng
License
creativecommons.org/licenses/by-sa/4.0

Abstract

Wide-bandgap (WBG) semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN) enable higher switching frequencies, greater efficiency, and increased power density, but their fast-switching transients and steep dv/dt and di/dt characteristics generate substantially elevated electromagnetic interference (EMI). This review synthesizes peer-reviewed studies to quantitatively compare EMI mitigation outcomes across source-side modulation, gate-driving, filtering, packaging, and AI-based techniques for WBG converters. Packaging-integrated common-mode screens cut CM current by up to 26 dB while raising partial-discharge inception voltage by 53%. Chaotic PWM with passive filtering reaches up to 50 dB attenuation with a 74% reduction in inductor volume. AI-based closed-loop adaptation attains up to 19.2 dB average attenuation with 98.5% CISPR 25 compliance, while RL-based filters reach 25-30 dB across wide frequency ranges. Active gate-driving reduces peak EMI by 19-39 dB. No single technique simultaneously delivers the highest suppression, efficiency, and lowest cost. Hybrid Si/WBG design currently offers the most balanced trade-off. These outcomes are consolidated into a taxonomy of propagation mechanisms, mitigation techniques, application-specific strategies across five domains, and open gaps in standardized testing and validation. These findings provide a practical, quantitative reference for engineers designing next-generation, EMC-compliant WBG power electronic systems.

Keywords

Collaboration network of the authors

40 authors · 130 co-authorship links · 4 across different organisations · showing the 40 most connected

Hover or tap a name to highlight its co-authors. Double-click to open the author's page.

  • University of Technology Malaysia
  • Universiti Malaysia Perlis
  • Universitas Ahmad Dahlan
  • University of Brawijaya
  • Affiliation unknown
  • Different organisations
  • Same organisation
  • Affiliation unknown
  • Thicker line = more joint articles · bigger circle = more articles
Show as table
Co-authorOrganisationJoint articles
Tole SutiknoUniversitas Ahmad Dahlan4
Mohammad Faridun Naim TajuddinUniversiti Malaysia Perlis4
Azralmukmin AzmiAffiliation unknown4
M. Saad ArifAffiliation unknown2
Norjulia Mohamad NordinAffiliation unknown2
Jasrul Jamani JamianUniversity of Technology Malaysia2
Razman AyopAffiliation unknown2
Chee Wei TanAffiliation unknown2
Dalya Hamzah Al-MamooriAffiliation unknown2
Nur Afida MuhammadAffiliation unknown1
Mohd Nasrul Izzani JamaludinAffiliation unknown1
Md. Ashraf Ali KhanAffiliation unknown1
Kuber KuberAffiliation unknown1
Yusra WahabAffiliation unknown1
Rini Nur HasanahUniversity of Brawijaya1
Muhammad Gul E. IslamAffiliation unknown1
Sevia Mahdaliza IdrusUniversity of Technology Malaysia1
Ahmad Takiyuddin AbdullahAffiliation unknown1
Mohd Junaidi Abdul AzizUniversity of Technology Malaysia1
Nor Akmal RaiAffiliation unknown1
Mohd Rodhi SahidAffiliation unknown1
Zulkarnain Ahmad NoordenUniversity of Technology Malaysia1
Nik Din MuhamadAffiliation unknown1
Zeeshan SarwerAffiliation unknown1
Mohd ZaidAffiliation unknown1
Shahbaz AhmadAffiliation unknown1
Shahril Irwan SulaimanAffiliation unknown1
Yazhar YatimAffiliation unknown1
M. Saad Bin ArifAffiliation unknown1
Naziha Ahmad AzliAffiliation unknown1
Ali A. Abdullah AlbakryAffiliation unknown1
Mohd Zaki DaudAffiliation unknown1
Mohd Fayzul MohammedAffiliation unknown1
Fawaz Ahmed Ali AlwesabiAffiliation unknown1
Ali Saleh AzizAffiliation unknown1
Mohamad Shukor Abdul RahimAffiliation unknown1

Affiliations come from OpenAlex; journal OAI-PMH metadata carries none. Authors without an OpenAlex ID are matched by name, which can merge or split people.

Metadata source: OAI-PMH (metadata jurnal) http://ijpeds.iaescore.com/index.php/IJPEDS/oai, first harvested 8 Nov 2026, last seen 8 Nov 2026.
Original metadata (oai_dc) 
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	<dc:title xml:lang="en-US">Adaptive electromagnetic interference mitigation for wide-bandgap power converters: a review</dc:title>
	<dc:creator>Rahman, Md Shishir</dc:creator>
	<dc:creator>Saimon, Siti Mahfuza</dc:creator>
	<dc:creator>Ayob, Shahrin Md</dc:creator>
	<dc:creator>Noor, Muhammad Yusof Mohd</dc:creator>
	<dc:subject xml:lang="en-US">electromagnetic interference; EMI mitigation; power electronics;  power electronics converters; wide-bandgap semiconductors</dc:subject>
	<dc:description xml:lang="en-US">Wide-bandgap (WBG) semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN) enable higher switching frequencies, greater efficiency, and increased power density, but their fast-switching transients and steep dv/dt and di/dt characteristics generate substantially elevated electromagnetic interference (EMI). This review synthesizes peer-reviewed studies to quantitatively compare EMI mitigation outcomes across source-side modulation, gate-driving, filtering, packaging, and AI-based techniques for WBG converters. Packaging-integrated common-mode screens cut CM current by up to 26 dB while raising partial-discharge inception voltage by 53%. Chaotic PWM with passive filtering reaches up to 50 dB attenuation with a 74% reduction in inductor volume. AI-based closed-loop adaptation attains up to 19.2 dB average attenuation with 98.5% CISPR 25 compliance, while RL-based filters reach 25-30 dB across wide frequency ranges. Active gate-driving reduces peak EMI by 19-39 dB. No single technique simultaneously delivers the highest suppression, efficiency, and lowest cost. Hybrid Si/WBG design currently offers the most balanced trade-off. These outcomes are consolidated into a taxonomy of propagation mechanisms, mitigation techniques, application-specific strategies across five domains, and open gaps in standardized testing and validation. These findings provide a practical, quantitative reference for engineers designing next-generation, EMC-compliant WBG power electronic systems.</dc:description>
	<dc:publisher xml:lang="en-US">Institute of Advanced Engineering and Science</dc:publisher>
	<dc:contributor xml:lang="en-US"></dc:contributor>
	<dc:date>2026-09-01</dc:date>
	<dc:type>info:eu-repo/semantics/article</dc:type>
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	<dc:type xml:lang="en-US"></dc:type>
	<dc:format>application/pdf</dc:format>
	<dc:identifier>https://ijpeds.iaescore.com/index.php/IJPEDS/article/view/25269</dc:identifier>
	<dc:identifier>10.11591/ijpeds.v17.i3.pp1941-1949</dc:identifier>
	<dc:source xml:lang="en-US">International Journal of Power Electronics and Drive Systems (IJPEDS); Vol 17, No 3: September 2026; 1941-1949</dc:source>
	<dc:source>2722-256X</dc:source>
	<dc:source>2088-8694</dc:source>
	<dc:source>10.11591/ijpeds.v17.i3</dc:source>
	<dc:language>eng</dc:language>
	<dc:relation>https://ijpeds.iaescore.com/index.php/IJPEDS/article/view/25269/15324</dc:relation>
	<dc:rights xml:lang="en-US">Copyright (c) 2026 Md Shishir Rahman, Siti Mahfuza Saimon, Shahrin Md Ayob, Muhammad Yusof Mohd Noor</dc:rights>
	<dc:rights xml:lang="en-US">http://creativecommons.org/licenses/by-sa/4.0</dc:rights>
</oai_dc:dc>