Calculation of power losses in a frequency inverter

Al-Rawashdeh, Ayman Y.; Dunayev, Mikhail Pavlovich; Alzyoud, Khalaf Y.; Dovudov, Sarfaroz U.

doi:10.11591/ijpeds.v15.i3.pp1331-1338

Open access Journal SINTA 1

Calculation of power losses in a frequency inverter

International Journal of Power Electronics and Drive Systems · Vol. 15 No. 3 (2024) · pp. 1331–1338

DOI: 10.11591/ijpeds.v15.i3.pp1331-1338
ISSN: 2722-256X, 2088-8694
Published: 2024-09-01
Publisher: Institute of Advanced Engineering and Science
Language: eng
License: creativecommons.org/licenses/by-sa/4.0

Abstract

This study's main goal is to make a new simulation model of the power losses calculation block for frequency converter power switches that can correctly figure out the transistors and diodes' static and dynamic power losses in a 1.5 kW SIEMENS SINAMICS G110 semiconductor converter (SSG110SC). We use simulation modeling tools in the MATLAB/Simulink environment to look at the semiconductor circuits of a rectifier and an autonomous pulse-width modulation voltage inverter. The study presents analytical expressions describing static and dynamic power losses in power semiconductor diodes and transistors. We used polynomials to get close to the power characteristics of insulated-gate bipolar transistor or IGBTs and then used mathematical expressions to show how they depend on Erec (Ic), Vse (Ic), Vf (If), Eon (Ic), and Eoff (Ic). By utilizing the acquired expressions, a MATLAB/Simulink block was constructed to calculate static and dynamic power losses. as well as power loss dependences on switching frequency and load current, were computed utilizing the developable block system. By comparing the simulation outcomes of the present study to the data provided by the manufacturer, the results were validated. Specific diode and transistor characteristics can be accounted for by the method developed in the present study.

Keywords

Collaboration network of the authors

18 authors · 45 co-authorship links · 4 across different organisations

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Al-Balqa Applied University
Tafila Technical University
Affiliation unknown

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Same organisation
Affiliation unknown
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Co-author	Organisation	Joint articles
Jawdat S. Alkasassbeh	Al-Balqa Applied University	4
Ashraf Samarah	Al-Balqa Applied University	3
Ali Dalabeeh	Al-Balqa Applied University	2
Abdallah Ershoud Alzyoud	Affiliation unknown	2
Hussein Ahmad Al-Ofeishat	Al-Balqa Applied University	2
Farouq M. Al-Taweel	Al-Balqa Applied University	2
Hisham Alrawashdeh	Tafila Technical University	2
Vlademer Е. Pavlov	Affiliation unknown	2
Omar Albarbarawi	Al-Balqa Applied University	1
Ghazi Qaryouti	Affiliation unknown	1
Afaq Hiary	Al-Balqa Applied University	1
Ameera Amayira	Al-Balqa Applied University	1
Hiba Asheesh	Al-Balqa Applied University	1
Vlademer E. Pavlov	Affiliation unknown	1

Affiliations come from OpenAlex; journal OAI-PMH metadata carries none. Authors without an OpenAlex ID are matched by name, which can merge or split people.

Metadata source: OAI-PMH (metadata jurnal) http://ijpeds.iaescore.com/index.php/IJPEDS/oai, first harvested 8 Nov 2026, last seen 8 Nov 2026.

Original metadata (oai_dc)

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	<dc:title xml:lang="en-US">Calculation of power losses in a frequency inverter</dc:title>
	<dc:creator>Al-Rawashdeh, Ayman Y.</dc:creator>
	<dc:creator>Dunayev, Mikhail Pavlovich</dc:creator>
	<dc:creator>Alzyoud, Khalaf Y.</dc:creator>
	<dc:creator>Dovudov, Sarfaroz U.</dc:creator>
	<dc:subject xml:lang="en-US">dynamic losses; efficiency; frequency converter; inverter; rectifier</dc:subject>
	<dc:description xml:lang="en-US">This study's main goal is to make a new simulation model of the power losses calculation block for frequency converter power switches that can correctly figure out the transistors and diodes' static and dynamic power losses in a 1.5 kW SIEMENS SINAMICS G110 semiconductor converter (SSG110SC). We use simulation modeling tools in the MATLAB/Simulink environment to look at the semiconductor circuits of a rectifier and an autonomous pulse-width modulation voltage inverter. The study presents analytical expressions describing static and dynamic power losses in power semiconductor diodes and transistors. We used polynomials to get close to the power characteristics of insulated-gate bipolar transistor or IGBTs and then used mathematical expressions to show how they depend on Erec (Ic), Vse (Ic), Vf (If), Eon (Ic), and Eoff (Ic). By utilizing the acquired expressions, a MATLAB/Simulink block was constructed to calculate static and dynamic power losses. as well as power loss dependences on switching frequency and load current, were computed utilizing the developable block system. By comparing the simulation outcomes of the present study to the data provided by the manufacturer, the results were validated. Specific diode and transistor characteristics can be accounted for by the method developed in the present study.</dc:description>
	<dc:publisher xml:lang="en-US">Institute of Advanced Engineering and Science</dc:publisher>
	<dc:contributor xml:lang="en-US">no sponsor</dc:contributor>
	<dc:date>2024-09-01</dc:date>
	<dc:type>info:eu-repo/semantics/article</dc:type>
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	<dc:identifier>https://ijpeds.iaescore.com/index.php/IJPEDS/article/view/21425</dc:identifier>
	<dc:identifier>10.11591/ijpeds.v15.i3.pp1331-1338</dc:identifier>
	<dc:source xml:lang="en-US">International Journal of Power Electronics and Drive Systems (IJPEDS); Vol 15, No 3: September 2024; 1331-1338</dc:source>
	<dc:source>2722-256X</dc:source>
	<dc:source>2088-8694</dc:source>
	<dc:source>10.11591/ijpeds.v15.i3</dc:source>
	<dc:language>eng</dc:language>
	<dc:relation>https://ijpeds.iaescore.com/index.php/IJPEDS/article/view/21425/14594</dc:relation>
	<dc:rights xml:lang="en-US">Copyright (c) 2024 Ayman Yasseen Al-Rawashdeh, M. P. Dunayev, S. U. Dovudov</dc:rights>
	<dc:rights xml:lang="en-US">http://creativecommons.org/licenses/by-sa/4.0</dc:rights>
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