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Role of tuning techniques in advancing the performance of negative capacitance field effecting based full adder

International Journal of Reconfigurable and Embedded Systems (IJRES) · Vol. 13 No. 1 (2024) · pp. 59–68

DOI
10.11591/ijres.v13.i1.pp59-68
ISSN
2722-2608, 2089-4864
Published
2024-03-01
Publisher
Institute of Advanced Engineering and Science
Language
eng
License
creativecommons.org/licenses/by-sa/4.0

Abstract

The increasing demand for faster, robust, and efficient device development of enabling technology to mass production of industrial research in circuit design deals with challenges like size, efficiency, power, and scalability. This paper, presents a design and analysis of low power high speed full adder using negative capacitance field effecting transistors. A comprehensive study is performed with adiabatic logic and reversable logic. The performance of full adder is studied with metal oxide field effect transistor (MOSFET) and negative capacitance field effecting (NCFET). The NCFET based full adder offers a low power and high speed compared with conventional MOSFET. The complete design and analysis are performed using cadence virtuoso. The adiabatic logic offering low delay of 0.023 ns and reversable logic is offering low power of 7.19 mw.

Keywords

Collaboration network of the authors

40 authors · 179 co-authorship links · 16 across different organisations · showing the 40 most connected

Hover or tap a name to highlight its co-authors. Double-click to open the author's page.

  • Koneru Lakshmaiah Education Foundation
  • Prasad V. Potluri Siddhartha Institute of Technology
  • Vignan's Foundation for Science, Technology & Research
  • GITAM University
  • Sathyabama Institute of Science and Technology
  • National Institute of Technology Warangal
  • R.V. College of Engineering
  • Affiliation unknown
  • Different organisations
  • Same organisation
  • Affiliation unknown
  • Thicker line = more joint articles · bigger circle = more articles
Show as table
Co-authorOrganisationJoint articles
Nelaturi Nanda PrakashAffiliation unknown10
Syed InthiyazAffiliation unknown8
Prudhvi Kiran PasamR.V. College of Engineering8
Shaik Hasane AhammadAffiliation unknown6
Popuri Rajani KumariKoneru Lakshmaiah Education Foundation6
Munuswamy Siva KumarKoneru Lakshmaiah Education Foundation6
Mukku BhavanaAffiliation unknown6
Yeluripati Lalitha KameswariAffiliation unknown6
Nitalaksheswara Rao KolukulaGITAM University5
Kondragunta Rama KrishnaiahAffiliation unknown5
Mohammad NajumunnisaAffiliation unknown5
Gouthami EragamreddyAffiliation unknown4
Cheeli Ashok KumarAffiliation unknown3
Kasula RajasriAffiliation unknown3
Kilari Jyothsna DeviPrasad V. Potluri Siddhartha Institute of Technology3
Chitra PerumalSathyabama Institute of Science and Technology2
Prakash KodaliNational Institute of Technology Warangal2
Bandreddi Venkata SeshukumariAffiliation unknown2
Jayasree PinajalaAffiliation unknown2
James Stephen MekaAffiliation unknown2
Mula Sreenivasa ReddyAffiliation unknown2
Anantha Sravanthi PeddintiAffiliation unknown2
Sreevardhan CheerlaAffiliation unknown2
Kaja Krishna MohanAffiliation unknown2
Sk. Hasane AhammadAffiliation unknown2
Movva Naga Venkata KiranbabuAffiliation unknown2
Banda Srinivas RajaAffiliation unknown2
Muzammil ParvezAffiliation unknown2
Giriprasad AmbatiAffiliation unknown2
Malligunta Kiran KumarKoneru Lakshmaiah Education Foundation1
Ramana Reddy GujjulaAffiliation unknown1

Affiliations come from OpenAlex; journal OAI-PMH metadata carries none. Authors without an OpenAlex ID are matched by name, which can merge or split people.

Metadata source: OAI-PMH (metadata jurnal) http://ijres.iaescore.com/index.php/IJRES/oai, first harvested 8 Nov 2026, last seen 8 Nov 2026.
Original metadata (oai_dc) 
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	<dc:title xml:lang="en-US">Role of tuning techniques in advancing the performance of negative capacitance field effecting based full adder</dc:title>
	<dc:creator>Daniel, Ravuri</dc:creator>
	<dc:creator>Prasad, Bode</dc:creator>
	<dc:creator>Chaturvedi, Abhay</dc:creator>
	<dc:creator>Balaswamy, Chinthaguntla</dc:creator>
	<dc:creator>Sudarsa, Dorababu</dc:creator>
	<dc:creator>Vinodhkumar, Nallathambi</dc:creator>
	<dc:creator>Eamani, Ramakrishna Reddy</dc:creator>
	<dc:creator>Sudhakar, Ambarapu</dc:creator>
	<dc:creator>Rajanna, Bodapati Venkata</dc:creator>
	<dc:subject xml:lang="en-US">Adiabatic logic; Full adder; MOSFET; NCFET; Reversible logic</dc:subject>
	<dc:description xml:lang="en-US">The increasing demand for faster, robust, and efficient device development of enabling technology to mass production of industrial research in circuit design deals with challenges like size, efficiency, power, and scalability. This paper, presents a design and analysis of low power high speed full adder using negative capacitance field effecting transistors. A comprehensive study is performed with adiabatic logic and reversable logic. The performance of full adder is studied with metal oxide field effect transistor (MOSFET) and negative capacitance field effecting (NCFET). The NCFET based full adder offers a low power and high speed compared with conventional MOSFET. The complete design and analysis are performed using cadence virtuoso. The adiabatic logic offering low delay of 0.023 ns and reversable logic is offering low power of 7.19 mw.</dc:description>
	<dc:publisher xml:lang="en-US">Institute of Advanced Engineering and Science</dc:publisher>
	<dc:contributor xml:lang="en-US"></dc:contributor>
	<dc:date>2024-03-01</dc:date>
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	<dc:identifier>https://ijres.iaescore.com/index.php/IJRES/article/view/20641</dc:identifier>
	<dc:identifier>10.11591/ijres.v13.i1.pp59-68</dc:identifier>
	<dc:source xml:lang="en-US">International Journal of Reconfigurable and Embedded Systems (IJRES); Vol 13, No 1: March 2024; 59-68</dc:source>
	<dc:source>2722-2608</dc:source>
	<dc:source>2089-4864</dc:source>
	<dc:source>10.11591/ijres.v13.i1</dc:source>
	<dc:language>eng</dc:language>
	<dc:relation>https://ijres.iaescore.com/index.php/IJRES/article/view/20641/pdf</dc:relation>
	<dc:rights xml:lang="en-US">Copyright (c) 2023 Institute of Advanced Engineering and Science (IAES)</dc:rights>
	<dc:rights xml:lang="en-US">http://creativecommons.org/licenses/by-sa/4.0</dc:rights>
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