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A new structure of a wide band bridge power limiter

International Journal of Electrical and Computer Engineering (IJECE) · Vol. 10 No. 4 (2020)

DOI
10.11591/ijece.v10i4.pp4035-4042
ISSN
2722-2578, 2088-8708
Published
2020-08-01
Publisher
Institute of Advanced Engineering and Science
License
creativecommons.org/licenses/by-sa/4.0

Abstract

In this work, new design and simulation of a microstrip power limiter based on Schottky diode is presented. The proposed circuit is a zero bias power limiter built by associating a transmission line in parallel to a four Schottky rectifier bridge circuit. The first circuit using a single stage rectifier is analyzed and simulated. To improve this single stage, a second and final limiter is designed with two stages rectifier. Simulation results for the final circuit show an ideal limiter behavior and good performance of limiting rate up to 20dB for a threshold input power varying from 5 dBm to 30 dBm. While insertion loss remains low at small signal.

Collaboration network of the authors

40 authors · 126 co-authorship links · 61 across different organisations · showing the 40 most connected

Hover or tap a name to highlight its co-authors. Double-click to open the author's page.

  • Université Hassan 1er
  • University of Hassan II Casablanca
  • Abdelmalek Essaâdi University
  • Université Moulay Ismail de Meknes
  • École Supérieure d'Électronique de l'Ouest
  • Institut National des Postes et Télécommunications
  • Université du Québec
  • Other organisations
  • Affiliation unknown
  • Different organisations
  • Same organisation
  • Affiliation unknown
  • Thicker line = more joint articles · bigger circle = more articles
Show as table
Co-authorOrganisationJoint articles
Mohamed LatrachÉcole Supérieure d'Électronique de l'Ouest19
Ahmed ErrkikUniversité Hassan 1er13
Larbi El AbdellaouiUniversité Hassan 1er9
Abdelali TajmouatiUniversité Hassan 1er7
Rachid MandryUniversité Hassan 1er4
Mohammed El MalahUniversité Hassan 1er4
Mhamed MadarkUniversité Hassan 1er4
Abdellfattah Ba-RazzoukUniversité Hassan 1er4
Fouad AytounaAbdelmalek Essaâdi University3
Abdelwahed TribakInstitut National des Postes et Télécommunications3
Mohamed RibateUniversité Hassan 1er3
Ahmed LakhssassiUniversité du Québec3
Abderrahim TaouniUniversity of Hassan II Casablanca3
Radouane MajdoulUniversity of Hassan II Casablanca3
Abderrahmane OuchattiUniversity of Hassan II Casablanca3
Mohamed AghoutaneAbdelmalek Essaâdi University2
Naima Amar TouhamiAbdelmalek Essaâdi University2
Mohamed AboulfatahUniversité Hassan 1er2
M'hammed GuisserUniversité Hassan 1er2
Amine RachakhUniversité Hassan 1er2
Ibtissame MoumaneUniversité Hassan 1er2
Badr NasiriUniversité Hassan 1er2
Bouchaib RachedUniversité Hassan 1er2
Mustapha ElharoussiUniversité Hassan 1er2
Aziz OukairaUniversité du Québec en Outaouais2
Abelwahed TouatiAffiliation unknown2
Mohamed IhamjiUniversité Hassan 1er2
Mostafa HefnawiRoyal Military College of Canada2
Ahmed El HamraouiUniversité Hassan 1er2
Abdelhadi EnnajihUniversité Hassan 1er1
Rachid DakirUniversité Hassan 1er1
Ahmed MouhsenUniversité Hassan 1er1
A. M. SanchezUniversidad de Cantabria1
Hicham BahriUniversity of Hassan II Casablanca1
Abdelghani BoudaoudUniversité Hassan 1er1
M. El HaroussiAffiliation unknown1

Affiliations come from OpenAlex; journal OAI-PMH metadata carries none. Authors without an OpenAlex ID are matched by name, which can merge or split people.

This record comes from Crossref (what the publisher deposited), because the journal's own OAI-PMH endpoint could not be harvested.

Metadata source: Crossref API (cadangan, berdasarkan ISSN) https://api.crossref.org/journals/2088-8708/works, first harvested 27 Oct 2026, last seen 8 Nov 2026.
Metadata as oai_dc, converted from Crossref 
<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/"><dc:title>A new structure of a wide band bridge power limiter</dc:title><dc:creator>Echchakhaoui, Khalifa</dc:creator><dc:creator>Abdelmounim, Elhassane</dc:creator><dc:creator>Zbitou, Jamal</dc:creator><dc:creator>Bennis, Hamid</dc:creator><dc:description>&lt;jats:p&gt;In this work, new design and simulation of a microstrip power limiter based on Schottky diode is presented. The proposed circuit is a zero bias power limiter built by associating a transmission line in parallel to a four Schottky rectifier bridge circuit. The first circuit using a single stage rectifier is analyzed and simulated. To improve this single stage, a second and final limiter is designed with two stages rectifier. Simulation results for the final circuit show an ideal limiter behavior and good performance of limiting rate up to 20dB for a threshold input power varying from 5 dBm to 30 dBm. While insertion loss remains low at small signal.&lt;/jats:p&gt;</dc:description><dc:publisher>Institute of Advanced Engineering and Science</dc:publisher><dc:date>2020-08-01</dc:date><dc:type>info:eu-repo/semantics/article</dc:type><dc:format>application/pdf</dc:format><dc:identifier>https://doi.org/10.11591/ijece.v10i4.pp4035-4042</dc:identifier><dc:identifier>10.11591/ijece.v10i4.pp4035-4042</dc:identifier><dc:source>International Journal of Electrical and Computer Engineering (IJECE); Vol 10 No 4 (2020); 4035</dc:source><dc:source>2722-2578</dc:source><dc:source>2088-8708</dc:source><dc:relation>http://ijece.iaescore.com/index.php/IJECE/article/viewFile/21348/14083</dc:relation><dc:rights>http://creativecommons.org/licenses/by-sa/4.0</dc:rights></oai_dc:dc>