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PENGARUH DOPING AL TERHADAP BAND GAP ENERGY LAPISAN TIPIS ZNO

JOURNAL ONLINE OF PHYSICS · Vol. 4 No. 1 (2019) · pp. 24–29

DOI
10.22437/jop.v4i1.5146
ISSN
2502-2016
Published
2019-07-17
Publisher
Prodi Fisika FST UNJA
Language
en

Abstract

[Title: The Effect of dopping Al on the Value of Band Gap Energy Thin Film of ZnO] A research has been conducted on the effect of doping Al on the value of band gap energy thin film ZnO with variation of concentration Al 0%, 4%, 6%, 8% and 10%. A thin film ZnO/Al is grown on a glass substrate using a spin coating technique. The resulting thin film was characterized using a UV-Vis measure the ZnO/Al transmittance value in the wavelength range 200-700 nm. Then calculate the value of band gap energy using the Swanepoel and touc Plot and obtained value band gap energy at concentration 0%, 4%, 6%, 8% and 10% successive is 3,94 eV, 3,25 eV, 3,24 eV, 3,22 eV dan 3,84 eV. Of the results obtained, the smallest band gap energy value at ZnO/Al 8% concentration of 3,22 eV. Keyword: Thin Film, Dopping, Band Gap Energy

Collaboration network of the authors

40 authors · 134 co-authorship links · 1 across different organisations

Hover or tap a name to highlight its co-authors. Double-click to open the author's page.

  • Universitas Jambi
  • Universitas Islam Negeri Antasari Banjarmasin
  • Universitas Muslim Indonesia
  • Affiliation unknown
  • Different organisations
  • Same organisation
  • Affiliation unknown
  • Thicker line = more joint articles · bigger circle = more articles
Show as table
Co-authorOrganisationJoint articles
Mardian PeslinofAffiliation unknown6
Restina BemisUniversitas Jambi2
Ira Kusuma DewiAffiliation unknown2
Rahmat BasukiAffiliation unknown2
devi indrianiAffiliation unknown2
Julianti LestariAffiliation unknown2
Indra Lasmana TariganAffiliation unknown1
Aditya Denny PrabawaAffiliation unknown1
Edwin PermanaAffiliation unknown1
Nelson NelsonAffiliation unknown1
Hamdan Maruli SiregarAffiliation unknown1
Tri SiswantoAffiliation unknown1
Muhaimin MuhaiminUniversitas Islam Negeri Antasari Banjarmasin1
Herijon Muhammad SyahrilAffiliation unknown1
Ratih Dyah PuspitasariAffiliation unknown1
Samsidar SamsidarUniversitas Muslim Indonesia1
Faizar FaridAffiliation unknown1
Sampe NapitupuluAffiliation unknown1
Sarinah PakpahanAffiliation unknown1
MEGA HARDIYANTI HPAffiliation unknown1
Nasri MZAffiliation unknown1
Febri MaulanaAffiliation unknown1
Elmas DopriAffiliation unknown1
NurhidayahAffiliation unknown1
Frastica DeswardaniAffiliation unknown1
M. Ficky AfriantoAffiliation unknown1
NazarudinAffiliation unknown1
NelsonAffiliation unknown1
Vidya Kusuma Wardani SAffiliation unknown1
Bunga DahliaAffiliation unknown1
Sigit Eko KurniawanAffiliation unknown1
, Shandy Yogaswara SPAffiliation unknown1
Sri Juari SantosaAffiliation unknown1
Bambang RusdiarsoAffiliation unknown1
Heriyanti HeriyantiAffiliation unknown1
rahmi rahmiAffiliation unknown1
Nashih UlwanAffiliation unknown1

Affiliations come from OpenAlex; journal OAI-PMH metadata carries none. Authors without an OpenAlex ID are matched by name, which can merge or split people.

Metadata source: OAI-PMH (metadata jurnal) https://online-journal.unja.ac.id/index.php/jop/oai, first harvested 6 Nov 2026, last seen 8 Nov 2026.
Original metadata (oai_dc) 
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	<dc:title xml:lang="en">PENGARUH DOPING AL TERHADAP BAND GAP ENERGY LAPISAN TIPIS ZNO</dc:title>
	<dc:creator xml:lang="en">Listiorini, Listiorini</dc:creator>
	<dc:creator xml:lang="en">Fahyuan, Helga Dwi</dc:creator>
	<dc:creator xml:lang="en">Ngatijo, Ngatijo</dc:creator>
	<dc:description xml:lang="en">[Title: The Effect of dopping Al on the Value of Band Gap Energy Thin Film of ZnO] A research has been conducted on the effect of doping Al on the value of band gap energy thin film ZnO with variation of concentration Al 0%, 4%, 6%, 8% and 10%. A thin film ZnO/Al is grown on a glass substrate using a spin coating technique. The resulting thin film was characterized using a UV-Vis measure the ZnO/Al transmittance value in the wavelength range 200-700 nm. Then calculate the value of band gap energy using the Swanepoel and touc Plot and obtained value band gap energy at concentration 0%, 4%, 6%, 8% and 10%&amp;nbsp; successive is 3,94 eV, 3,25 eV, 3,24 eV, 3,22 eV dan 3,84 eV. Of the results obtained, the smallest band gap energy value at ZnO/Al 8% concentration of 3,22 eV.
Keyword: Thin Film, Dopping, Band Gap Energy</dc:description>
	<dc:publisher xml:lang="en">Prodi Fisika FST UNJA</dc:publisher>
	<dc:date>2019-07-17</dc:date>
	<dc:type>info:eu-repo/semantics/article</dc:type>
	<dc:type>info:eu-repo/semantics/publishedVersion</dc:type>
	<dc:format>application/pdf</dc:format>
	<dc:identifier>https://online-journal.unja.ac.id/jop/article/view/5146</dc:identifier>
	<dc:identifier>10.22437/jop.v4i1.5146</dc:identifier>
	<dc:source xml:lang="en">JOURNAL ONLINE OF PHYSICS; Vol. 4 No. 1 (2018): JOP (Journal Online of Physics) Vol 4 No 1; 24-29</dc:source>
	<dc:source>2502-2016</dc:source>
	<dc:language>en</dc:language>
	<dc:relation>https://online-journal.unja.ac.id/jop/article/view/5146/8961</dc:relation>
	<dc:rights xml:lang="en">Copyright (c) 2019 JOURNAL ONLINE OF PHYSICS</dc:rights>
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