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Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor

International Journal of Electrical and Computer Engineering (IJECE) · Vol. 9 No. 4 (2019)

DOI
10.11591/ijece.v9i4.pp2902-2909
ISSN
2088-8708, 2088-8708
Published
2019-08-01
Publisher
Institute of Advanced Engineering and Science
License
creativecommons.org/licenses/by-nc/4.0

Abstract

In this paper, we present the impact of downscaling of nano-channel dimensions of Indium Arsenide Fin Feld Effect Transistor (InAs- FinFET) on electrical characteristics of the transistor, in particular; (i) ION/IOFF ratio, (ii) Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was utilized to simulate and compare the considered characteristics based on variable channel dimensions: length, width and oxide thickness. The results demonstrate that the best performance of InAs- FinFET was achieved with channel length = 25 nm, width= 5 nm, and oxide thickness between 1.5 to 2.5 nm according to the selected scaling factor (K = 0.125).

Collaboration network of the authors

26 authors · 63 co-authorship links · 24 across different organisations

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  • Universiti Malaysia Pahang Al-Sultan Abdullah
  • Tishk International University
  • Universiti Putra Malaysia
  • University of Mosul
  • University of Technology Malaysia
  • Taiz University
  • Affiliation unknown
  • Different organisations
  • Same organisation
  • Affiliation unknown
  • Thicker line = more joint articles · bigger circle = more articles
Show as table
Co-authorOrganisationJoint articles
Yousif AtallaUniversiti Malaysia Pahang Al-Sultan Abdullah3
Abdul Nasir Abd. GhafarAffiliation unknown3
Mohd Amir Shahlan Mohd AsparUniversiti Malaysia Pahang Al-Sultan Abdullah2
Akram A. AlmohammediUniversiti Putra Malaysia1
Nor Kamariah NoordinUniversiti Putra Malaysia1
Aduwati Binti SaliUniversiti Putra Malaysia1
Fazirulhisyam HashimUniversiti Putra Malaysia1
Sabri SaeedTaiz University1
Firas Natheer Abdul-kadirUniversity of Mosul1
Muhammad Nazmus ShakibAffiliation unknown1
Faris Hassan TahaUniversity of Mosul1
Hussein Mohammed AliTishk International University1
Ghadah A. Al-SakkalTishk International University1
Marwa AwniTishk International University1
Abdullah MufeedTishk International University1
A. HadiUniversiti Malaysia Pahang Al-Sultan Abdullah1
Nurulain ShaipuzamanUniversiti Malaysia Pahang Al-Sultan Abdullah1
Mohd Rashidi SalimUniversity of Technology Malaysia1
Devin BabuUniversiti Malaysia Pahang Al-Sultan Abdullah1
Muhammad Hisyam RosleUniversity of Technology Malaysia1
Noorazliza SulaimanUniversiti Malaysia Pahang Al-Sultan Abdullah1
Abdul NasirUniversiti Malaysia Pahang Al-Sultan Abdullah1

Affiliations come from OpenAlex; journal OAI-PMH metadata carries none. Authors without an OpenAlex ID are matched by name, which can merge or split people.

This record comes from Crossref (what the publisher deposited), because the journal's own OAI-PMH endpoint could not be harvested.

Metadata source: Crossref API (cadangan, berdasarkan ISSN) https://api.crossref.org/journals/2088-8708/works, first harvested 27 Okt 2026, last seen 27 Okt 2026.
Metadata as oai_dc, converted from Crossref
<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/"><dc:title>Effects of downscaling channel dimensions on electrical characteristics of InAs-FinFET transistor</dc:title><dc:creator>Mahmood, Ahmed</dc:creator><dc:creator>Jabbar, Waheb A.</dc:creator><dc:creator>Hashim, Yasir</dc:creator><dc:creator>Manap, Hadi Bin</dc:creator><dc:description>&lt;jats:p&gt;In this paper, we present the impact of downscaling of nano-channel dimensions of Indium Arsenide Fin Feld Effect Transistor (InAs- FinFET) on electrical characteristics of the transistor, in particular; (i) ION/IOFF ratio, (ii) Subthreshold Swing (SS), Threshold voltage (VT), and Drain-induced barrier lowering (DIBL). MuGFET simulation tool was utilized to simulate and compare the considered characteristics based on variable channel dimensions: length, width and oxide thickness. The results demonstrate that the best performance of InAs- FinFET was achieved with channel length = 25 nm, width= 5 nm, and oxide thickness between 1.5 to 2.5 nm according to the selected scaling factor (K = 0.125).&lt;/jats:p&gt;</dc:description><dc:publisher>Institute of Advanced Engineering and Science</dc:publisher><dc:date>2019-08-01</dc:date><dc:type>info:eu-repo/semantics/article</dc:type><dc:format>application/pdf</dc:format><dc:identifier>https://doi.org/10.11591/ijece.v9i4.pp2902-2909</dc:identifier><dc:identifier>10.11591/ijece.v9i4.pp2902-2909</dc:identifier><dc:source>International Journal of Electrical and Computer Engineering (IJECE); Vol 9 No 4 (2019); 2902</dc:source><dc:source>2088-8708</dc:source><dc:source>2088-8708</dc:source><dc:relation>http://ijece.iaescore.com/index.php/IJECE/article/viewFile/15510/13117</dc:relation><dc:rights>http://creativecommons.org/licenses/by-nc/4.0</dc:rights></oai_dc:dc>