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Temperature characteristics of FinFET based on channel fin width and working voltage

International Journal of Electrical and Computer Engineering (IJECE) · Vol. 10 No. 6 (2020)

DOI
10.11591/ijece.v10i6.pp5650-5657
ISSN
2722-2578, 2088-8708
Published
2020-12-01
Publisher
Institute of Advanced Engineering and Science
License
creativecommons.org/licenses/by-sa/4.0

Abstract

This paper shows the temperature sensitivity of FinFET and the possibility of using FinFET as a temperature Nano sensor based on Fin width of transistor. The multi-gate field effect transistor (MuGFET) simulation tool is used to examine the temperature effect on FinFET characteristics. Current-voltage characteristics with various temperatures and channel Fin width (WF= 5,10,20,40 and 80 nm) are at first simulated, the diode mode connection has been used in this study. The best temperature sensitivity of the FinFET is has been considered under the biggest ∆I at the working voltage VDD with range of 0–5 V. According to the results, the temperature sensitivity increased linearly with all the range of channel Fin width (5-80 nm), also, the lower gate Fin width (WF=5nm) with higher sensitivity can achieved with lower working voltage (VDD=1.25 V).

Collaboration network of the authors

23 authors · 54 co-authorship links · 20 across different organisations

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  • Universiti Malaysia Pahang Al-Sultan Abdullah
  • Tishk International University
  • Universiti Putra Malaysia
  • University of Mosul
  • Taiz University
  • University of Technology Malaysia
  • Affiliation unknown
  • Different organisations
  • Same organisation
  • Affiliation unknown
  • Thicker line = more joint articles · bigger circle = more articles
Show as table
Co-authorOrganisationJoint articles
Ahmed MahmoodUniversiti Malaysia Pahang Al-Sultan Abdullah2
Hadi ManapUniversiti Malaysia Pahang Al-Sultan Abdullah2
Akram A. AlmohammediUniversiti Putra Malaysia1
Nor Kamariah NoordinUniversiti Putra Malaysia1
Aduwati Binti SaliUniversiti Putra Malaysia1
Fazirulhisyam HashimUniversiti Putra Malaysia1
Sabri SaeedTaiz University1
Firas Natheer Abdul-kadirUniversity of Mosul1
Muhammad Nazmus ShakibAffiliation unknown1
Faris Hassan TahaUniversity of Mosul1
Hussein Mohammed AliTishk International University1
Ghadah A. Al-SakkalTishk International University1
Marwa AwniTishk International University1
Abdullah MufeedTishk International University1
Mohd Amir Shahlan Mohd AsparUniversiti Malaysia Pahang Al-Sultan Abdullah1
Devin BabuUniversiti Malaysia Pahang Al-Sultan Abdullah1
Muhammad Hisyam RosleUniversity of Technology Malaysia1
Noorazliza SulaimanUniversiti Malaysia Pahang Al-Sultan Abdullah1
Abdul NasirUniversiti Malaysia Pahang Al-Sultan Abdullah1

Affiliations come from OpenAlex; journal OAI-PMH metadata carries none. Authors without an OpenAlex ID are matched by name, which can merge or split people.

This record comes from Crossref (what the publisher deposited), because the journal's own OAI-PMH endpoint could not be harvested.

Metadata source: Crossref API (cadangan, berdasarkan ISSN) https://api.crossref.org/journals/2088-8708/works, first harvested 27 Okt 2026, last seen 27 Okt 2026.
Metadata as oai_dc, converted from Crossref
<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/"><dc:title>Temperature characteristics of FinFET based on channel fin width and working voltage</dc:title><dc:creator>Atalla, Yousif</dc:creator><dc:creator>Hashim, Yasir</dc:creator><dc:creator>Abd. Ghafar, Abdul Nasir</dc:creator><dc:creator>Jabbar, Waheb A.</dc:creator><dc:description>&lt;jats:p&gt;This paper shows the temperature sensitivity of FinFET and the possibility of using FinFET as a temperature Nano sensor based on Fin width of transistor. The multi-gate field effect transistor (MuGFET) simulation tool is used to examine the temperature effect on FinFET characteristics. Current-voltage characteristics with various temperatures and channel Fin width (WF= 5,10,20,40 and 80 nm) are at first simulated, the diode mode connection has been used in this study. The best temperature sensitivity of the FinFET is has been considered under the biggest ∆I at the working voltage VDD with range of 0–5 V. According to the results, the temperature sensitivity increased linearly with all the range of channel Fin width (5-80 nm), also, the lower gate Fin width (WF=5nm) with higher sensitivity can achieved with lower working voltage (VDD=1.25 V).&lt;/jats:p&gt;</dc:description><dc:publisher>Institute of Advanced Engineering and Science</dc:publisher><dc:date>2020-12-01</dc:date><dc:type>info:eu-repo/semantics/article</dc:type><dc:format>application/pdf</dc:format><dc:identifier>https://doi.org/10.11591/ijece.v10i6.pp5650-5657</dc:identifier><dc:identifier>10.11591/ijece.v10i6.pp5650-5657</dc:identifier><dc:source>International Journal of Electrical and Computer Engineering (IJECE); Vol 10 No 6 (2020); 5650</dc:source><dc:source>2722-2578</dc:source><dc:source>2088-8708</dc:source><dc:relation>http://ijece.iaescore.com/index.php/IJECE/article/viewFile/22764/14348</dc:relation><dc:rights>http://creativecommons.org/licenses/by-sa/4.0</dc:rights></oai_dc:dc>